Improved light extraction efficiency in GaN-based light emitting diodes

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

The improvement in light extraction efficiency (LEE) of GaN-based LEDs is one of the most important areas for increasing the external quantum efficiency for solid-state lighting applications. We summarize the advances in this field.

Original languageEnglish
Title of host publicationGaN and ZnO-based Materials and Devices
EditorsStephen Pearton
Pages153-164
Number of pages12
Edition1
DOIs
Publication statusPublished - 2012 Dec 10

Publication series

NameSpringer Series in Materials Science
Number1
Volume156
ISSN (Print)0933-033X

ASJC Scopus subject areas

  • Materials Science(all)

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  • Cite this

    Kim, J. (2012). Improved light extraction efficiency in GaN-based light emitting diodes. In S. Pearton (Ed.), GaN and ZnO-based Materials and Devices (1 ed., pp. 153-164). (Springer Series in Materials Science; Vol. 156, No. 1). https://doi.org/10.1007/978-3-642-23521-4_5