The improvement in light extraction efficiency (LEE) of GaN-based LEDs is one of the most important areas for increasing the external quantum efficiency for solid-state lighting applications. We summarize the advances in this field.
|Title of host publication||GaN and ZnO-based Materials and Devices|
|Number of pages||12|
|Publication status||Published - 2012 Dec 10|
|Name||Springer Series in Materials Science|
ASJC Scopus subject areas
- Materials Science(all)