Abstract
We investigated the light output power of blue light-emitting diodes (LEDs) fabricated with AgNi contacts as a function of the Ni content. Annealing the AgNi contacts at 400°C in air significantly improved their electrical characteristics. The AgNi samples with 10.0 wt.% Ni showed reflectance of 80.9% at 460 nm, whereas the Ag-only contacts gave 71.1%. After annealing at 400°C, the AgNi contacts exhibited better thermal stability than did the Ag-only contacts. Their current-voltage relationships showed that blue LEDs fabricated with Ag-only contacts gave a forward voltage of 3.33 V at 20 mA, whereas those fabricated with AgNi contacts with 10.0 wt.% Ni produced 3.03 V. LEDs fabricated with the AgNi contacts exhibited output power higher by 5.9% to 19.1% than those with Ag-only contacts. Based on scanning electron microscopy and x-ray photoemission spectroscopy results, the improved thermal and electrical behaviors are described and discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 2173-2178 |
| Number of pages | 6 |
| Journal | Journal of Electronic Materials |
| Volume | 40 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2011 Nov 1 |
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Keywords
- AgNi
- Light-emitting diodes
- Ohmic contact
- Reflectivity
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
Cite this
Improved light output of GaN-based light-emitting diodes by using AgNi reflective contacts. / Jung, Se Yeon; Lee, Sang Youl; Song, June O.; Jin, Sungho; Seong, Tae Yeon.
In: Journal of Electronic Materials, Vol. 40, No. 11, 01.11.2011, p. 2173-2178.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Improved light output of GaN-based light-emitting diodes by using AgNi reflective contacts
AU - Jung, Se Yeon
AU - Lee, Sang Youl
AU - Song, June O.
AU - Jin, Sungho
AU - Seong, Tae Yeon
PY - 2011/11/1
Y1 - 2011/11/1
N2 - We investigated the light output power of blue light-emitting diodes (LEDs) fabricated with AgNi contacts as a function of the Ni content. Annealing the AgNi contacts at 400°C in air significantly improved their electrical characteristics. The AgNi samples with 10.0 wt.% Ni showed reflectance of 80.9% at 460 nm, whereas the Ag-only contacts gave 71.1%. After annealing at 400°C, the AgNi contacts exhibited better thermal stability than did the Ag-only contacts. Their current-voltage relationships showed that blue LEDs fabricated with Ag-only contacts gave a forward voltage of 3.33 V at 20 mA, whereas those fabricated with AgNi contacts with 10.0 wt.% Ni produced 3.03 V. LEDs fabricated with the AgNi contacts exhibited output power higher by 5.9% to 19.1% than those with Ag-only contacts. Based on scanning electron microscopy and x-ray photoemission spectroscopy results, the improved thermal and electrical behaviors are described and discussed.
AB - We investigated the light output power of blue light-emitting diodes (LEDs) fabricated with AgNi contacts as a function of the Ni content. Annealing the AgNi contacts at 400°C in air significantly improved their electrical characteristics. The AgNi samples with 10.0 wt.% Ni showed reflectance of 80.9% at 460 nm, whereas the Ag-only contacts gave 71.1%. After annealing at 400°C, the AgNi contacts exhibited better thermal stability than did the Ag-only contacts. Their current-voltage relationships showed that blue LEDs fabricated with Ag-only contacts gave a forward voltage of 3.33 V at 20 mA, whereas those fabricated with AgNi contacts with 10.0 wt.% Ni produced 3.03 V. LEDs fabricated with the AgNi contacts exhibited output power higher by 5.9% to 19.1% than those with Ag-only contacts. Based on scanning electron microscopy and x-ray photoemission spectroscopy results, the improved thermal and electrical behaviors are described and discussed.
KW - AgNi
KW - Light-emitting diodes
KW - Ohmic contact
KW - Reflectivity
UR - http://www.scopus.com/inward/record.url?scp=83155181566&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=83155181566&partnerID=8YFLogxK
U2 - 10.1007/s11664-011-1745-3
DO - 10.1007/s11664-011-1745-3
M3 - Article
AN - SCOPUS:83155181566
VL - 40
SP - 2173
EP - 2178
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 11
ER -