Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices

Su Jin Kim, Sung Hun Son, Tae Geun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this paper, we report the effect of p-type AlGaInN/GaN superlattices (SLs) as electronblocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in the output power and the external quantum efficiency (EQE) as compared to VLEDs using p-AlGaInN EBL and p- AlGaN EBL. The forward voltages at 350 mA were calculated to be 4.1, 4.3, and 4.4 V for VLEDs with p-AlInGaN/GaN SLs, p-AlInGaN, and p-AlGaN EBLs, respectively. When p-AlInGaN/GaN SLs were inserted as the EBLs, the light-output power and the EQE were also improved by 16.8% and 17.3% at 350 mA, respectively, as compared to those with p-AlGaN EBLs.

Original languageEnglish
Pages (from-to)1258-1262
Number of pages5
JournalJournal of the Korean Physical Society
Volume60
Issue number8
DOIs
Publication statusPublished - 2012

Keywords

  • AlIn-GaN
  • Electron blocking layer (EBL)
  • Light-emitting diodes (LEDs)
  • Superlattices (SLs)
  • Vertical

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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