Abstract
In this paper, we report the effect of p-type AlGaInN/GaN superlattices (SLs) as electronblocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in the output power and the external quantum efficiency (EQE) as compared to VLEDs using p-AlGaInN EBL and p- AlGaN EBL. The forward voltages at 350 mA were calculated to be 4.1, 4.3, and 4.4 V for VLEDs with p-AlInGaN/GaN SLs, p-AlInGaN, and p-AlGaN EBLs, respectively. When p-AlInGaN/GaN SLs were inserted as the EBLs, the light-output power and the EQE were also improved by 16.8% and 17.3% at 350 mA, respectively, as compared to those with p-AlGaN EBLs.
| Original language | English |
|---|---|
| Pages (from-to) | 1258-1262 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 60 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2012 |
Keywords
- AlIn-GaN
- Electron blocking layer (EBL)
- Light-emitting diodes (LEDs)
- Superlattices (SLs)
- Vertical
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Cite this
Kim, S. J., Son, S. H., & Kim, T. G. (2012). Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices. Journal of the Korean Physical Society, 60(8), 1258-1262. https://doi.org/10.3938/jkps.60.1258