Abstract
In this paper, we report the effect of p-type AlGaInN/GaN superlattices (SLs) as electronblocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in the output power and the external quantum efficiency (EQE) as compared to VLEDs using p-AlGaInN EBL and p- AlGaN EBL. The forward voltages at 350 mA were calculated to be 4.1, 4.3, and 4.4 V for VLEDs with p-AlInGaN/GaN SLs, p-AlInGaN, and p-AlGaN EBLs, respectively. When p-AlInGaN/GaN SLs were inserted as the EBLs, the light-output power and the EQE were also improved by 16.8% and 17.3% at 350 mA, respectively, as compared to those with p-AlGaN EBLs.
| Original language | English |
|---|---|
| Pages (from-to) | 1258-1262 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 60 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2012 Dec 1 |
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Keywords
- AlIn-GaN
- Electron blocking layer (EBL)
- Light-emitting diodes (LEDs)
- Superlattices (SLs)
- Vertical
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices. / Kim, Su Jin; Son, Sung Hun; Kim, Tae Geun.
In: Journal of the Korean Physical Society, Vol. 60, No. 8, 01.12.2012, p. 1258-1262.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices
AU - Kim, Su Jin
AU - Son, Sung Hun
AU - Kim, Tae Geun
PY - 2012/12/1
Y1 - 2012/12/1
N2 - In this paper, we report the effect of p-type AlGaInN/GaN superlattices (SLs) as electronblocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in the output power and the external quantum efficiency (EQE) as compared to VLEDs using p-AlGaInN EBL and p- AlGaN EBL. The forward voltages at 350 mA were calculated to be 4.1, 4.3, and 4.4 V for VLEDs with p-AlInGaN/GaN SLs, p-AlInGaN, and p-AlGaN EBLs, respectively. When p-AlInGaN/GaN SLs were inserted as the EBLs, the light-output power and the EQE were also improved by 16.8% and 17.3% at 350 mA, respectively, as compared to those with p-AlGaN EBLs.
AB - In this paper, we report the effect of p-type AlGaInN/GaN superlattices (SLs) as electronblocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in the output power and the external quantum efficiency (EQE) as compared to VLEDs using p-AlGaInN EBL and p- AlGaN EBL. The forward voltages at 350 mA were calculated to be 4.1, 4.3, and 4.4 V for VLEDs with p-AlInGaN/GaN SLs, p-AlInGaN, and p-AlGaN EBLs, respectively. When p-AlInGaN/GaN SLs were inserted as the EBLs, the light-output power and the EQE were also improved by 16.8% and 17.3% at 350 mA, respectively, as compared to those with p-AlGaN EBLs.
KW - AlIn-GaN
KW - Electron blocking layer (EBL)
KW - Light-emitting diodes (LEDs)
KW - Superlattices (SLs)
KW - Vertical
UR - http://www.scopus.com/inward/record.url?scp=84872856092&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84872856092&partnerID=8YFLogxK
U2 - 10.3938/jkps.60.1258
DO - 10.3938/jkps.60.1258
M3 - Article
AN - SCOPUS:84872856092
VL - 60
SP - 1258
EP - 1262
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 8
ER -