Improved light output power of GaN-based flip-chip light-emitting diode through SiO2 cones

Se Yeon Jung, Tae Yeon Seong

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We formed SiO2 cones on p-type GaN by using a simple wet-etching process and investigated the effects of the size and the coverage of the SiO2 cones on the output power performance of GaN-based light-emitting diodes (LEDs). The diameter of two different size SiO2 cones and the distance between the cones are in a range of 17. 3-21. 1 μm and 32. 7-33. 9 μm, respectively. The coverage of the SiO2 cones on p-type GaN is measured to be 9. 5-10. 9%. As the SiO2 cone size increases, LEDs exhibit a slightly higher forwardbias voltage (at an injection current of 20 mA) and somewhat higher series resistance. The light output increases with an increase in the size of the cones; the LEDs fabricated with the cones exhibit 5. 8-8. 4% higher light output power (at 20 mA) than those without the SiO2 cones.

Original languageEnglish
Pages (from-to)549-552
Number of pages4
JournalElectronic Materials Letters
Volume8
Issue number6
DOIs
Publication statusPublished - 2012 Dec 1

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Light emitting diodes
Cones
Wet etching
Electric potential

Keywords

  • Ag
  • cone
  • light-emitting diode
  • ohmic reflector
  • silicon dioxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Improved light output power of GaN-based flip-chip light-emitting diode through SiO2 cones. / Jung, Se Yeon; Seong, Tae Yeon.

In: Electronic Materials Letters, Vol. 8, No. 6, 01.12.2012, p. 549-552.

Research output: Contribution to journalArticle

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