Improved light output power of GaN-based light emitting diodes by enhancing current spreading using single-wall carbon nanotubes

Se Yeon Jung, Kyeong Heon Kim, Sang Yong Jeong, Joon Woo Jeon, Jihyung Moon, Sang Youl Lee, June O. Song, Young Tae Byun, Tae Yeon Seong

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Single-wall carbon nanotubes (SWCNTs) have been combined with indium tin oxide (ITO) to improve the output power of GaN-based light emitting diodes (LEDs). LEDs fabricated with the SWCNT/ITO contacts give a forward voltage of 3.61 V at 350 mA, which is slightly higher than that of LEDs with ITO-only contacts. The SWCNT/ITO and ITO-only contacts produce transmittance values of 91.5 and 94.4% at 460 nm, respectively. However, LEDs with SWCNTs show a higher output power by 60% at 20 mA compared to those without SWCNTs. Photoemission microscope analyses show that the well-dispersed SWCNT bundle efficiently serves as a current spreader.

Original languageEnglish
Pages (from-to)H33-H35
JournalElectrochemical and Solid-State Letters
Volume13
Issue number2
DOIs
Publication statusPublished - 2010

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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