Improved local oxidation of silicon carbide using atomic force microscopy

Yeong Deuk Jo; Soo Hyung Seo; Wook Bahng; Sang Cheol Kim; Nam Kyun Kim; Sang Sig Kim; Sang Mo Koo

doi:10.1063/1.3327832

Improved local oxidation of silicon carbide using atomic force microscopy

Yeong Deuk Jo, Soo Hyung Seo, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim, Sang Sig Kim, Sang Mo Koo

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The atomic force microscopy-based local oxidation (AFM-LO) of silicon carbide (SiC) is extremely difficult in general, mainly due to their physical hardness and chemical inactivity. Herein, we report the strongly enhanced AFM-LO of 4H-SiC at room temperature without the heating, chemicals or photoillumination. It is demonstrated that the increased tip loading force (∼>100 nN) on the highly doped SiC can produce a high enough electric field (∼8× 10⁶ V/cm) under the cathode tip for transporting oxyanions, thereby leading to direct oxide growth on 4H-SiC. The doping concentration and electric field profile of the tip-SiC sample structures were further examined by two-dimensional numerical simulations.

Original language	English
Article number	082105
Journal	Applied Physics Letters
Volume	96
Issue number	8
DOIs	https://doi.org/10.1063/1.3327832
Publication status	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Improved local oxidation of silicon carbide using atomic force microscopy",

abstract = "The atomic force microscopy-based local oxidation (AFM-LO) of silicon carbide (SiC) is extremely difficult in general, mainly due to their physical hardness and chemical inactivity. Herein, we report the strongly enhanced AFM-LO of 4H-SiC at room temperature without the heating, chemicals or photoillumination. It is demonstrated that the increased tip loading force (∼>100 nN) on the highly doped SiC can produce a high enough electric field (∼8× 106 V/cm) under the cathode tip for transporting oxyanions, thereby leading to direct oxide growth on 4H-SiC. The doping concentration and electric field profile of the tip-SiC sample structures were further examined by two-dimensional numerical simulations.",

author = "Jo, {Yeong Deuk} and Seo, {Soo Hyung} and Wook Bahng and Kim, {Sang Cheol} and Kim, {Nam Kyun} and Kim, {Sang Sig} and Koo, {Sang Mo}",

note = "Funding Information: This work was supported by the “system IC2010” and survey of high efficiency power devices and inverter system for power grid projects of the Korea Ministry of Knowledge Economy. ",

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T1 - Improved local oxidation of silicon carbide using atomic force microscopy

AU - Jo, Yeong Deuk

AU - Seo, Soo Hyung

AU - Bahng, Wook

AU - Kim, Sang Cheol

AU - Kim, Nam Kyun

AU - Kim, Sang Sig

AU - Koo, Sang Mo

N1 - Funding Information: This work was supported by the “system IC2010” and survey of high efficiency power devices and inverter system for power grid projects of the Korea Ministry of Knowledge Economy.

PY - 2010

Y1 - 2010

N2 - The atomic force microscopy-based local oxidation (AFM-LO) of silicon carbide (SiC) is extremely difficult in general, mainly due to their physical hardness and chemical inactivity. Herein, we report the strongly enhanced AFM-LO of 4H-SiC at room temperature without the heating, chemicals or photoillumination. It is demonstrated that the increased tip loading force (∼>100 nN) on the highly doped SiC can produce a high enough electric field (∼8× 106 V/cm) under the cathode tip for transporting oxyanions, thereby leading to direct oxide growth on 4H-SiC. The doping concentration and electric field profile of the tip-SiC sample structures were further examined by two-dimensional numerical simulations.

AB - The atomic force microscopy-based local oxidation (AFM-LO) of silicon carbide (SiC) is extremely difficult in general, mainly due to their physical hardness and chemical inactivity. Herein, we report the strongly enhanced AFM-LO of 4H-SiC at room temperature without the heating, chemicals or photoillumination. It is demonstrated that the increased tip loading force (∼>100 nN) on the highly doped SiC can produce a high enough electric field (∼8× 106 V/cm) under the cathode tip for transporting oxyanions, thereby leading to direct oxide growth on 4H-SiC. The doping concentration and electric field profile of the tip-SiC sample structures were further examined by two-dimensional numerical simulations.

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Improved local oxidation of silicon carbide using atomic force microscopy

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