Improved local oxidation of silicon carbide using atomic force microscopy

Yeong Deuk Jo, Soo Hyung Seo, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim, Sang Sig Kim, Sang Mo Koo

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Abstract

The atomic force microscopy-based local oxidation (AFM-LO) of silicon carbide (SiC) is extremely difficult in general, mainly due to their physical hardness and chemical inactivity. Herein, we report the strongly enhanced AFM-LO of 4H-SiC at room temperature without the heating, chemicals or photoillumination. It is demonstrated that the increased tip loading force (∼>100 nN) on the highly doped SiC can produce a high enough electric field (∼8× 106 V/cm) under the cathode tip for transporting oxyanions, thereby leading to direct oxide growth on 4H-SiC. The doping concentration and electric field profile of the tip-SiC sample structures were further examined by two-dimensional numerical simulations.

Original languageEnglish
Article number082105
JournalApplied Physics Letters
Volume96
Issue number8
DOIs
Publication statusPublished - 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Jo, Y. D., Seo, S. H., Bahng, W., Kim, S. C., Kim, N. K., Kim, S. S., & Koo, S. M. (2010). Improved local oxidation of silicon carbide using atomic force microscopy. Applied Physics Letters, 96(8), [082105]. https://doi.org/10.1063/1.3327832