Improved local oxidation of silicon carbide using atomic force microscopy

Yeong Deuk Jo, Soo Hyung Seo, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim, Sangsig Kim, Sang Mo Koo

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The atomic force microscopy-based local oxidation (AFM-LO) of silicon carbide (SiC) is extremely difficult in general, mainly due to their physical hardness and chemical inactivity. Herein, we report the strongly enhanced AFM-LO of 4H-SiC at room temperature without the heating, chemicals or photoillumination. It is demonstrated that the increased tip loading force (∼>100 nN) on the highly doped SiC can produce a high enough electric field (∼8× 106 V/cm) under the cathode tip for transporting oxyanions, thereby leading to direct oxide growth on 4H-SiC. The doping concentration and electric field profile of the tip-SiC sample structures were further examined by two-dimensional numerical simulations.

Original languageEnglish
Article number082105
JournalApplied Physics Letters
Volume96
Issue number8
DOIs
Publication statusPublished - 2010 Mar 12

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silicon carbides
atomic force microscopy
oxidation
electric fields
hardness
cathodes
heating
oxides
room temperature
profiles
simulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Jo, Y. D., Seo, S. H., Bahng, W., Kim, S. C., Kim, N. K., Kim, S., & Koo, S. M. (2010). Improved local oxidation of silicon carbide using atomic force microscopy. Applied Physics Letters, 96(8), [082105]. https://doi.org/10.1063/1.3327832

Improved local oxidation of silicon carbide using atomic force microscopy. / Jo, Yeong Deuk; Seo, Soo Hyung; Bahng, Wook; Kim, Sang Cheol; Kim, Nam Kyun; Kim, Sangsig; Koo, Sang Mo.

In: Applied Physics Letters, Vol. 96, No. 8, 082105, 12.03.2010.

Research output: Contribution to journalArticle

Jo, Yeong Deuk ; Seo, Soo Hyung ; Bahng, Wook ; Kim, Sang Cheol ; Kim, Nam Kyun ; Kim, Sangsig ; Koo, Sang Mo. / Improved local oxidation of silicon carbide using atomic force microscopy. In: Applied Physics Letters. 2010 ; Vol. 96, No. 8.
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