AlGaN/GaN High Electron Mobility Transistors (HEMTs) were fabricated with Ti/Al/TiB 2/Ti/Au source/drain Ohmic contacts and a variety of gate metal schemes (Pt/Au, Ni/Au, Pt/TiB 2/Au or Ni/TiB 2/Au) and subjected to long-term annealing at 350°C. By comparison with companion devices with conventional Ti/Al/Pt/Au Ohmic contacts and Pt/Au gate contacts, the HEMTs with boride-based Ohmic metal and either Pt/Au, Ni/Au or Ni/TiB 2/Au gate metal showed superior stability of both source-drain current and transconductance after 25 days aging at 350°C.
- High electron mobility transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry