Improved long-term thermal stability at 350°C of TiB 2-based Ohmic contacts on AlGaN/GaN high electron mobility transistors

Rohit Khanna, L. Stafford, S. J. Pearton, T. J. Anderson, F. Ren, I. I. Kravchenko, Amir Dabiran, A. Osinsky, Joon Yeob Lee, Kwan Young Lee, Ji Hyun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

AlGaN/GaN High Electron Mobility Transistors (HEMTs) were fabricated with Ti/Al/TiB 2/Ti/Au source/drain Ohmic contacts and a variety of gate metal schemes (Pt/Au, Ni/Au, Pt/TiB 2/Au or Ni/TiB 2/Au) and subjected to long-term annealing at 350°C. By comparison with companion devices with conventional Ti/Al/Pt/Au Ohmic contacts and Pt/Au gate contacts, the HEMTs with boride-based Ohmic metal and either Pt/Au, Ni/Au or Ni/TiB 2/Au gate metal showed superior stability of both source-drain current and transconductance after 25 days aging at 350°C.

Original languageEnglish
Pages (from-to)379-383
Number of pages5
JournalJournal of Electronic Materials
Volume36
Issue number4
DOIs
Publication statusPublished - 2007 Apr 1
Externally publishedYes

Keywords

  • Contacts
  • GaN
  • High electron mobility transistor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Khanna, R., Stafford, L., Pearton, S. J., Anderson, T. J., Ren, F., Kravchenko, I. I., Dabiran, A., Osinsky, A., Lee, J. Y., Lee, K. Y., & Kim, J. H. (2007). Improved long-term thermal stability at 350°C of TiB 2-based Ohmic contacts on AlGaN/GaN high electron mobility transistors. Journal of Electronic Materials, 36(4), 379-383. https://doi.org/10.1007/s11664-006-0036-x