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Dive into the research topics of 'Improved long-term thermal stability at 350°C of TiB 2-based Ohmic contacts on AlGaN/GaN high electron mobility transistors'. Together they form a unique fingerprint.- Sort by
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Rohit Khanna, L. Stafford, S. J. Pearton, T. J. Anderson, F. Ren, I. I. Kravchenko, Amir Dabiran, A. Osinsky, Joon Yeob Lee, Kwan Young Lee, Jihyun Kim
Research output: Contribution to journal › Article › peer-review