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Improved long-term thermal stability at 350°C of TiB 2-based Ohmic contacts on AlGaN/GaN high electron mobility transistors
Rohit Khanna, L. Stafford, S. J. Pearton, T. J. Anderson, F. Ren, I. I. Kravchenko, Amir Dabiran, A. Osinsky, Joon Yeob Lee, Kwan Young Lee, Jihyun Kim
Research output: Contribution to journal › Article › peer-review
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(Scopus)