Improved materials for MOVPE growth of GaSb and InSb

R. M. Graham, A. C. Jones, N. J. Mason, S. Rushworth, A. Salesse, Tae Yeon Seong, G. Booker, L. Smith, P. J. Walker

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Some factors affecting the MOVPE growth of GaSb and InSb and structures based on these materials and their alloys are investigated. Trimethylantimony (TMSb) and tertiarybutyldimethylantimony (TBDMSb) have been synthesized and assessed by growing bulk layers of GaSb and InSb. The use of TBDMSb has allowed the growth of InSb at 400 degrees C as compared with 450 degrees C using TMSb. all the alkyls used have had their pyrolysis kinetics determined under real growth conditions using in situ ultraviolet spectroscopy. A thorough study of the initial nucleation of GaSb onto GaAs substrates has been performed using atomic force microscopy (AFM), TEM (cross-sectional and plan view) and quasi-elastic light scattering (QLS). Bulk layers of GaSb have been grown using optimized and non-optimized buffer layers to assess the effect on optical, structural and electrical properties of the grown layers.

Original languageEnglish
Article number002
Pages (from-to)1797-1802
Number of pages6
JournalSemiconductor Science and Technology
Volume8
Issue number10
DOIs
Publication statusPublished - 1993 Dec 1
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Graham, R. M., Jones, A. C., Mason, N. J., Rushworth, S., Salesse, A., Seong, T. Y., Booker, G., Smith, L., & Walker, P. J. (1993). Improved materials for MOVPE growth of GaSb and InSb. Semiconductor Science and Technology, 8(10), 1797-1802. [002]. https://doi.org/10.1088/0268-1242/8/10/002