Improved output power of gan-based vertical light emitting diodes fabricated with current blocking region formed by o2 plasma treatment

Sang Youl Lee, Kwang Ki Choi, Hwan Hee Jeong, Eun Joo Kim, Hyo Kun Son, Sung Jin Son, June O. Song, Tae Yeon Seong

Research output: Contribution to journalArticle

3 Citations (Scopus)


We report on the formation of current blocking regions by O2 plasma treatment to reduce current crowding at the active region above the p-type electrodes of GaN-based vertical light emitting diodes (LEDs). The forward voltage and reverse current (at -5 V) of the plasma-treated LEDs slightly increase with increasing aging time. The output power (at 350 mA) of the plasma-treated LEDs is enhanced by 26% as compared to that of reference LEDs and is comparable to that of LEDs with SiO2 current blocking layers. It is shown that the output power (at 700 mA) of the plasmatreated LEDs is degraded by less than 2% of the initial value after 500 h.

Original languageEnglish
Article number076504
JournalJapanese Journal of Applied Physics
Issue number7 PART 1
Publication statusPublished - 2011 Jul 1


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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