Improved performance in charge-trap-type flash memories with an Al 2O3 dielectric by using bandgap engineering of charge-trapping layers

Yu Jeong Seo, Ho Myoung An, Hee Dong Kim, Tae Geun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A band-engineered configuration of the new polycrystalline Si/Al 2O3/Si3N4/SiO2/Si (SANOS) device structure with a non-uniform nitride composition is proposed for high-density flash memories. The dramatic improvement can be attributed to the charge trapping efficiency, the data retention and the cycling endurance performance. The SANOS device designed in this paper holds promise for applications to next-generation charge-trap memory devices.

Original languageEnglish
Pages (from-to)2689-2692
Number of pages4
JournalJournal of the Korean Physical Society
Volume55
Issue number6 PART. 1
DOIs
Publication statusPublished - 2009 Dec 1

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flash
trapping
traps
engineering
endurance
nitrides
cycles
configurations

Keywords

  • ANO
  • Bandgap engineering
  • SANOS
  • Si-rich

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Improved performance in charge-trap-type flash memories with an Al 2O3 dielectric by using bandgap engineering of charge-trapping layers. / Seo, Yu Jeong; An, Ho Myoung; Kim, Hee Dong; Kim, Tae Geun.

In: Journal of the Korean Physical Society, Vol. 55, No. 6 PART. 1, 01.12.2009, p. 2689-2692.

Research output: Contribution to journalArticle

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