Improved performance of Ga<inf>2</inf>O<inf>3</inf>/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes

Sukwon Kim, Su Jin Kim, Kyeong Heon Kim, Hee Dong Kim, Tae Geun Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)


We investigated the use of transparent conductive oxide for near-ultraviolet light-emitting diodes based on co-sputtered gallium oxide (Ga<inf>2</inf>O<inf>3</inf>) and indium tin oxide (ITO). The electrical and optical properties of Ga<inf>2</inf>O<inf>3</inf>/ITO (IGTO) were observed to improve through hydrogen annealing, which resulted in a sheet resistance of 164 Ω/□ and an optical transmittance of 94% at increased carrier concentration and crystallization of the co-sputtered film through hydrogen annealing. Moreover, ohmic-like contacts were formed on the p-GaN substrate with a specific contact resistance of 3.9 × 10<sup>-1</sup> Ω cm<sup>2</sup>.

Original languageEnglish
Pages (from-to)2569-2573
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number11
Publication statusPublished - 2014 Nov 1



  • co-sputtering
  • Ga<inf>2</inf>O<inf>3</inf>
  • hydrogen annealing
  • IGTO
  • transparent conductive oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this