Improved performance of GaN-based vertical light emitting diodes with conducting and transparent single-walled carbon nanotube networks

Su Jin Kim, Kyeong Heon Kim, Tae Geun Kim

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7 Citations (Scopus)

Abstract

In this study, reduced forward voltage and improved light output power of GaN-based vertical light-emitting diodes (VLEDs) incorporating single-walled carbon nanotube (SWNT)-networks is reported. The SWNTnetworks were directly formed on a roughened (textured) n-GaN surface via a solution-processed dip-coating method. The surface-roughened VLEDs with the proposed SWNT-networks had a forward voltage of 3.84 V at 350 mA, lower than that of the surface-roughened VLEDs, and exhibited an increase in light output power by 12.9% at 350 mA compared to the surface-roughened VLEDs. These improved electrical and optical properties could be attributed to the SWNT-networks put on the roughened n-GaN surface, which increase the lateral current transport and create scattering of light through the formation of additional roughness.

Original languageEnglish
Pages (from-to)8062-8068
Number of pages7
JournalOptics Express
Volume21
Issue number7
DOIs
Publication statusPublished - 2013 Apr 8

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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