Improved performance of Ga2O3/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes

Sukwon Kim, Su Jin Kim, Kyeong Heon Kim, Hee Dong Kim, Tae Geun Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We investigated the use of transparent conductive oxide for near-ultraviolet light-emitting diodes based on co-sputtered gallium oxide (Ga2O3) and indium tin oxide (ITO). The electrical and optical properties of Ga2O3/ITO (IGTO) were observed to improve through hydrogen annealing, which resulted in a sheet resistance of 164 Ω/□ and an optical transmittance of 94% at increased carrier concentration and crystallization of the co-sputtered film through hydrogen annealing. Moreover, ohmic-like contacts were formed on the p-GaN substrate with a specific contact resistance of 3.9 × 10-1 Ω cm2.

Original languageEnglish
Pages (from-to)2569-2573
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume211
Issue number11
DOIs
Publication statusPublished - 2014 Nov 1

Keywords

  • GaO
  • IGTO
  • co-sputtering
  • hydrogen annealing
  • transparent conductive oxides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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