Improved performance of nanocrystal quantum dots-based LEDs by modifying hole transport layer

Jihye Lee, Chang-Soo Han, Sohee Jeong, Byoung Ho Kang, Seok Min Hong, Do Eok Kim, Shin Won Kang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Reported herein are the effects of the fabrication variables and surface capping of nanocrystal quantum dots (NQDs) on the characteristics of NQDs-based light-emitting diodes (LEDs). The molecular weight of the hole transport layer (HTL) material and the annealing conditions of the NQDs layer were chosen as fabrication process variables. Their effects on the layer characteristics and device efficiency were characterized. The maximum brightness varied over 50% according to the molecular weight of the HTL material. The optimized annealing temperature was shown to improve the maximum brightness by 20%. The surface-capping molecules of the NQDs were changed from conventional trioctyl phosphine/trioctyl phosphine oxide (TOPO/TOP) to pyridine and were incorporated into LEDs, and its effects on the device characteristics were discussed Copyright

Original languageEnglish
Pages (from-to)432-436
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1
Externally publishedYes

Fingerprint

Quantum Dots
Nanoparticles
Nanocrystals
Semiconductor quantum dots
Light emitting diodes
nanocrystals
light emitting diodes
quantum dots
Light
phosphine
phosphines
Luminance
molecular weight
brightness
Molecular Weight
Molecular weight
Annealing
Fabrication
Equipment and Supplies
fabrication

Keywords

  • HTL
  • LEDs
  • Nanocrystal
  • Quantum dot
  • TOPO/TOP

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Improved performance of nanocrystal quantum dots-based LEDs by modifying hole transport layer. / Lee, Jihye; Han, Chang-Soo; Jeong, Sohee; Kang, Byoung Ho; Hong, Seok Min; Kim, Do Eok; Kang, Shin Won.

In: Journal of Nanoscience and Nanotechnology, Vol. 11, No. 1, 01.01.2011, p. 432-436.

Research output: Contribution to journalArticle

Lee, Jihye ; Han, Chang-Soo ; Jeong, Sohee ; Kang, Byoung Ho ; Hong, Seok Min ; Kim, Do Eok ; Kang, Shin Won. / Improved performance of nanocrystal quantum dots-based LEDs by modifying hole transport layer. In: Journal of Nanoscience and Nanotechnology. 2011 ; Vol. 11, No. 1. pp. 432-436.
@article{b099a960feb64111a848eba7609bcfb0,
title = "Improved performance of nanocrystal quantum dots-based LEDs by modifying hole transport layer",
abstract = "Reported herein are the effects of the fabrication variables and surface capping of nanocrystal quantum dots (NQDs) on the characteristics of NQDs-based light-emitting diodes (LEDs). The molecular weight of the hole transport layer (HTL) material and the annealing conditions of the NQDs layer were chosen as fabrication process variables. Their effects on the layer characteristics and device efficiency were characterized. The maximum brightness varied over 50{\%} according to the molecular weight of the HTL material. The optimized annealing temperature was shown to improve the maximum brightness by 20{\%}. The surface-capping molecules of the NQDs were changed from conventional trioctyl phosphine/trioctyl phosphine oxide (TOPO/TOP) to pyridine and were incorporated into LEDs, and its effects on the device characteristics were discussed Copyright",
keywords = "HTL, LEDs, Nanocrystal, Quantum dot, TOPO/TOP",
author = "Jihye Lee and Chang-Soo Han and Sohee Jeong and Kang, {Byoung Ho} and Hong, {Seok Min} and Kim, {Do Eok} and Kang, {Shin Won}",
year = "2011",
month = "1",
day = "1",
doi = "10.1166/jnn.2011.3162",
language = "English",
volume = "11",
pages = "432--436",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "1",

}

TY - JOUR

T1 - Improved performance of nanocrystal quantum dots-based LEDs by modifying hole transport layer

AU - Lee, Jihye

AU - Han, Chang-Soo

AU - Jeong, Sohee

AU - Kang, Byoung Ho

AU - Hong, Seok Min

AU - Kim, Do Eok

AU - Kang, Shin Won

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Reported herein are the effects of the fabrication variables and surface capping of nanocrystal quantum dots (NQDs) on the characteristics of NQDs-based light-emitting diodes (LEDs). The molecular weight of the hole transport layer (HTL) material and the annealing conditions of the NQDs layer were chosen as fabrication process variables. Their effects on the layer characteristics and device efficiency were characterized. The maximum brightness varied over 50% according to the molecular weight of the HTL material. The optimized annealing temperature was shown to improve the maximum brightness by 20%. The surface-capping molecules of the NQDs were changed from conventional trioctyl phosphine/trioctyl phosphine oxide (TOPO/TOP) to pyridine and were incorporated into LEDs, and its effects on the device characteristics were discussed Copyright

AB - Reported herein are the effects of the fabrication variables and surface capping of nanocrystal quantum dots (NQDs) on the characteristics of NQDs-based light-emitting diodes (LEDs). The molecular weight of the hole transport layer (HTL) material and the annealing conditions of the NQDs layer were chosen as fabrication process variables. Their effects on the layer characteristics and device efficiency were characterized. The maximum brightness varied over 50% according to the molecular weight of the HTL material. The optimized annealing temperature was shown to improve the maximum brightness by 20%. The surface-capping molecules of the NQDs were changed from conventional trioctyl phosphine/trioctyl phosphine oxide (TOPO/TOP) to pyridine and were incorporated into LEDs, and its effects on the device characteristics were discussed Copyright

KW - HTL

KW - LEDs

KW - Nanocrystal

KW - Quantum dot

KW - TOPO/TOP

UR - http://www.scopus.com/inward/record.url?scp=84863075591&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863075591&partnerID=8YFLogxK

U2 - 10.1166/jnn.2011.3162

DO - 10.1166/jnn.2011.3162

M3 - Article

VL - 11

SP - 432

EP - 436

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 1

ER -