Abstract
The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/ Si3N4/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/ Si3N4/Ti sample annealed at 250 °C for 30 min in a N2-H2 ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 μA, respectively, whereas the current ratio increases from ∼0.5×101 to ∼103. In addition, its reliability features, including its endurance (>103 cycles) and retention time (>ten years) have been improved due to the reduction in the interface trap.
| Original language | English |
|---|---|
| Article number | 016105 |
| Journal | Journal of Applied Physics |
| Volume | 109 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2011 Jan 1 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Kim, H. D., An, H. M., & Kim, T. G. (2011). Improved reliability of Au/Si3N4 /Ti resistive switching memory cells due to a hydrogen postannealing treatment. Journal of Applied Physics, 109(1), [016105]. https://doi.org/10.1063/1.3525991