Improved reliability of Au/Si3N4 /Ti resistive switching memory cells due to a hydrogen postannealing treatment

Hee Dong Kim, Ho Myoung An, Tae Geun Kim

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33 Citations (Scopus)

Abstract

The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/ Si3N4/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/ Si3N4/Ti sample annealed at 250 °C for 30 min in a N2-H2 ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 μA, respectively, whereas the current ratio increases from ∼0.5×101 to ∼103. In addition, its reliability features, including its endurance (>103 cycles) and retention time (>ten years) have been improved due to the reduction in the interface trap.

Original languageEnglish
Article number016105
JournalJournal of Applied Physics
Volume109
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1

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  • Physics and Astronomy(all)

Cite this

Improved reliability of Au/Si3N4 /Ti resistive switching memory cells due to a hydrogen postannealing treatment. / Kim, Hee Dong; An, Ho Myoung; Kim, Tae Geun.

In: Journal of Applied Physics, Vol. 109, No. 1, 016105, 01.01.2011.

Research output: Contribution to journalArticle

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