Improved reliability of Au/Si3N4 /Ti resistive switching memory cells due to a hydrogen postannealing treatment

Hee Dong Kim; Ho Myoung An; Tae Geun Kim

doi:10.1063/1.3525991

Improved reliability of Au/Si₃N₄ /Ti resistive switching memory cells due to a hydrogen postannealing treatment

Hee Dong Kim, Ho Myoung An, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/ Si₃N₄/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/ Si₃N₄/Ti sample annealed at 250 °C for 30 min in a N₂-H₂ ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 μA, respectively, whereas the current ratio increases from ∼0.5×10¹ to ∼10³. In addition, its reliability features, including its endurance (>103 cycles) and retention time (>ten years) have been improved due to the reduction in the interface trap.

Original language	English
Article number	016105
Journal	Journal of Applied Physics
Volume	109
Issue number	1
DOIs	https://doi.org/10.1063/1.3525991
Publication status	Published - 2011 Jan 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.3525991

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title = "Improved reliability of Au/Si3N4 /Ti resistive switching memory cells due to a hydrogen postannealing treatment",

abstract = "The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/ Si3N4/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/ Si3N4/Ti sample annealed at 250 °C for 30 min in a N2-H2 ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 μA, respectively, whereas the current ratio increases from ∼0.5×101 to ∼103. In addition, its reliability features, including its endurance (>103 cycles) and retention time (>ten years) have been improved due to the reduction in the interface trap.",

author = "Kim, {Hee Dong} and An, {Ho Myoung} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by the Seoul R&BD Program as well as the National Research Foundation grant funded by the Korean Government (Grant No. K20901000002-09E0100-00210).",

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AU - Kim, Hee Dong

AU - An, Ho Myoung

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by the Seoul R&BD Program as well as the National Research Foundation grant funded by the Korean Government (Grant No. K20901000002-09E0100-00210).

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N2 - The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/ Si3N4/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/ Si3N4/Ti sample annealed at 250 °C for 30 min in a N2-H2 ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 μA, respectively, whereas the current ratio increases from ∼0.5×101 to ∼103. In addition, its reliability features, including its endurance (>103 cycles) and retention time (>ten years) have been improved due to the reduction in the interface trap.

AB - The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/ Si3N4/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/ Si3N4/Ti sample annealed at 250 °C for 30 min in a N2-H2 ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 μA, respectively, whereas the current ratio increases from ∼0.5×101 to ∼103. In addition, its reliability features, including its endurance (>103 cycles) and retention time (>ten years) have been improved due to the reduction in the interface trap.

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Improved reliability of Au/Si₃N₄ /Ti resistive switching memory cells due to a hydrogen postannealing treatment

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