Abstract
The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/ Si3N4/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/ Si3N4/Ti sample annealed at 250 °C for 30 min in a N2-H2 ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 μA, respectively, whereas the current ratio increases from ∼0.5×101 to ∼103. In addition, its reliability features, including its endurance (>103 cycles) and retention time (>ten years) have been improved due to the reduction in the interface trap.
| Original language | English |
|---|---|
| Article number | 016105 |
| Journal | Journal of Applied Physics |
| Volume | 109 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2011 Jan 1 |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Improved reliability of Au/Si3N4 /Ti resistive switching memory cells due to a hydrogen postannealing treatment. / Kim, Hee Dong; An, Ho Myoung; Kim, Tae Geun.
In: Journal of Applied Physics, Vol. 109, No. 1, 016105, 01.01.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Improved reliability of Au/Si3N4 /Ti resistive switching memory cells due to a hydrogen postannealing treatment
AU - Kim, Hee Dong
AU - An, Ho Myoung
AU - Kim, Tae Geun
PY - 2011/1/1
Y1 - 2011/1/1
N2 - The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/ Si3N4/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/ Si3N4/Ti sample annealed at 250 °C for 30 min in a N2-H2 ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 μA, respectively, whereas the current ratio increases from ∼0.5×101 to ∼103. In addition, its reliability features, including its endurance (>103 cycles) and retention time (>ten years) have been improved due to the reduction in the interface trap.
AB - The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/ Si3N4/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/ Si3N4/Ti sample annealed at 250 °C for 30 min in a N2-H2 ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 μA, respectively, whereas the current ratio increases from ∼0.5×101 to ∼103. In addition, its reliability features, including its endurance (>103 cycles) and retention time (>ten years) have been improved due to the reduction in the interface trap.
UR - http://www.scopus.com/inward/record.url?scp=78751522684&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78751522684&partnerID=8YFLogxK
U2 - 10.1063/1.3525991
DO - 10.1063/1.3525991
M3 - Article
VL - 109
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 1
M1 - 016105
ER -