Improved reliability of Au/Si3N4 /Ti resistive switching memory cells due to a hydrogen postannealing treatment

Hee Dong Kim; Ho Myoung An; Tae Geun Kim

doi:10.1063/1.3525991

Improved reliability of Au/Si₃N₄ /Ti resistive switching memory cells due to a hydrogen postannealing treatment

Hee Dong Kim, Ho Myoung An, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/ Si₃N₄/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/ Si₃N₄/Ti sample annealed at 250 °C for 30 min in a N₂-H₂ ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 μA, respectively, whereas the current ratio increases from ∼0.5×10¹ to ∼10³. In addition, its reliability features, including its endurance (>103 cycles) and retention time (>ten years) have been improved due to the reduction in the interface trap.

Original language	English
Article number	016105
Journal	Journal of Applied Physics
Volume	109
Issue number	1
DOIs	https://doi.org/10.1063/1.3525991
Publication status	Published - 2011 Jan 1

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.3525991

Cite this

@article{1af803a247624048b3f9d9722e9a41ef,

title = "Improved reliability of Au/Si3N4 /Ti resistive switching memory cells due to a hydrogen postannealing treatment",

abstract = "The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/ Si3N4/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/ Si3N4/Ti sample annealed at 250 °C for 30 min in a N2-H2 ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 μA, respectively, whereas the current ratio increases from ∼0.5×101 to ∼103. In addition, its reliability features, including its endurance (>103 cycles) and retention time (>ten years) have been improved due to the reduction in the interface trap.",

author = "Kim, {Hee Dong} and An, {Ho Myoung} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by the Seoul R&BD Program as well as the National Research Foundation grant funded by the Korean Government (Grant No. K20901000002-09E0100-00210).",

year = "2011",

month = jan,

day = "1",

doi = "10.1063/1.3525991",

language = "English",

volume = "109",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Improved reliability of Au/Si3N4 /Ti resistive switching memory cells due to a hydrogen postannealing treatment

AU - Kim, Hee Dong

AU - An, Ho Myoung

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by the Seoul R&BD Program as well as the National Research Foundation grant funded by the Korean Government (Grant No. K20901000002-09E0100-00210).

PY - 2011/1/1

Y1 - 2011/1/1

N2 - The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/ Si3N4/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/ Si3N4/Ti sample annealed at 250 °C for 30 min in a N2-H2 ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 μA, respectively, whereas the current ratio increases from ∼0.5×101 to ∼103. In addition, its reliability features, including its endurance (>103 cycles) and retention time (>ten years) have been improved due to the reduction in the interface trap.

AB - The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/ Si3N4/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/ Si3N4/Ti sample annealed at 250 °C for 30 min in a N2-H2 ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 μA, respectively, whereas the current ratio increases from ∼0.5×101 to ∼103. In addition, its reliability features, including its endurance (>103 cycles) and retention time (>ten years) have been improved due to the reduction in the interface trap.

UR - http://www.scopus.com/inward/record.url?scp=78751522684&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78751522684&partnerID=8YFLogxK

U2 - 10.1063/1.3525991

DO - 10.1063/1.3525991

M3 - Article

AN - SCOPUS:78751522684

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 1

M1 - 016105

ER -

Improved reliability of Au/Si₃N₄ /Ti resistive switching memory cells due to a hydrogen postannealing treatment

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this