Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing

Hee Dong Kim; Min Ju Yun; Seok Man Hong; Ho Myoung An; Tae Geun Kim

doi:10.1116/1.4813792

Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing

Hee Dong Kim, Min Ju Yun, Seok Man Hong, Ho Myoung An, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The authors investigated the effects of hydrogen postannealing on data retention and set/reset current variation in a Ti/ZrN/Pt resistive switching memory cell. Annealing the Ti/ZrN/Pt sample in a N₂+H₂ ambient gas versus a N₂ ambient gas reduced the set currents from 10.4 to 4.1mA and the reset currents from 1.2 to 0.2μA, whereas the current ratio increased from ∼9×10³ to ∼2×10⁴. In addition, current variations in the set and reset states decrease at temperatures of 25 and 85°C (>10yr) due to reduction of the interface trap by hydrogen passivation effects.

Original language	English
Article number	041205
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	31
Issue number	4
DOIs	https://doi.org/10.1116/1.4813792
Publication status	Published - 2013 Jul

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing",

abstract = "The authors investigated the effects of hydrogen postannealing on data retention and set/reset current variation in a Ti/ZrN/Pt resistive switching memory cell. Annealing the Ti/ZrN/Pt sample in a N2+H2 ambient gas versus a N2 ambient gas reduced the set currents from 10.4 to 4.1mA and the reset currents from 1.2 to 0.2μA, whereas the current ratio increased from ∼9×103 to ∼2×104. In addition, current variations in the set and reset states decrease at temperatures of 25 and 85°C (>10yr) due to reduction of the interface trap by hydrogen passivation effects.",

author = "Kim, {Hee Dong} and {Ju Yun}, Min and {Man Hong}, Seok and An, {Ho Myoung} and {Geun Kim}, Tae",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. 2011-0028769, 2012-00109). This work was also supported by the Samsung Semiconductor Research Center of Korea University.",

year = "2013",

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doi = "10.1116/1.4813792",

language = "English",

volume = "31",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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AU - Kim, Hee Dong

AU - Ju Yun, Min

AU - Man Hong, Seok

AU - An, Ho Myoung

AU - Geun Kim, Tae

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. 2011-0028769, 2012-00109). This work was also supported by the Samsung Semiconductor Research Center of Korea University.

PY - 2013/7

Y1 - 2013/7

N2 - The authors investigated the effects of hydrogen postannealing on data retention and set/reset current variation in a Ti/ZrN/Pt resistive switching memory cell. Annealing the Ti/ZrN/Pt sample in a N2+H2 ambient gas versus a N2 ambient gas reduced the set currents from 10.4 to 4.1mA and the reset currents from 1.2 to 0.2μA, whereas the current ratio increased from ∼9×103 to ∼2×104. In addition, current variations in the set and reset states decrease at temperatures of 25 and 85°C (>10yr) due to reduction of the interface trap by hydrogen passivation effects.

AB - The authors investigated the effects of hydrogen postannealing on data retention and set/reset current variation in a Ti/ZrN/Pt resistive switching memory cell. Annealing the Ti/ZrN/Pt sample in a N2+H2 ambient gas versus a N2 ambient gas reduced the set currents from 10.4 to 4.1mA and the reset currents from 1.2 to 0.2μA, whereas the current ratio increased from ∼9×103 to ∼2×104. In addition, current variations in the set and reset states decrease at temperatures of 25 and 85°C (>10yr) due to reduction of the interface trap by hydrogen passivation effects.

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Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing

Abstract

ASJC Scopus subject areas

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