Abstract
The authors investigated the effects of hydrogen postannealing on data retention and set/reset current variation in a Ti/ZrN/Pt resistive switching memory cell. Annealing the Ti/ZrN/Pt sample in a N2+H2 ambient gas versus a N2 ambient gas reduced the set currents from 10.4 to 4.1mA and the reset currents from 1.2 to 0.2μA, whereas the current ratio increased from ∼9×103 to ∼2×104. In addition, current variations in the set and reset states decrease at temperatures of 25 and 85°C (>10yr) due to reduction of the interface trap by hydrogen passivation effects.
| Original language | English |
|---|---|
| Article number | 041205 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 31 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2013 Jul |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Kim, H. D., Ju Yun, M., Man Hong, S., An, H. M., & Geun Kim, T. (2013). Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31(4), [041205]. https://doi.org/10.1116/1.4813792