The authors investigated the effects of hydrogen postannealing on data retention and set/reset current variation in a Ti/ZrN/Pt resistive switching memory cell. Annealing the Ti/ZrN/Pt sample in a N2+H2 ambient gas versus a N2 ambient gas reduced the set currents from 10.4 to 4.1mA and the reset currents from 1.2 to 0.2μA, whereas the current ratio increased from ∼9×103 to ∼2×104. In addition, current variations in the set and reset states decrease at temperatures of 25 and 85°C (>10yr) due to reduction of the interface trap by hydrogen passivation effects.
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2013 Jul|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering