Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering

Min Ju Yun, Hee Dong Kim, Tae Geun Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this paper, the authors report the forming-free bipolar-switching operation at low set/reset voltages (VSET/VRESET) using a Pt embedded-NiN based resistive random access memory (ReRAM) cell. Compared to conventional NiN based ReRAM cells, the variations in VSET and V RESET were reduced from 1 to 0.4 V and from 0.4 to 0.2 V, respectively, using the Pt embedded ReRAM cells. These results show that the embedded Pt particles might assist in the uniform formation of the conducting filaments in the NiN films, without an initial forming process. In addition, in the endurance and retention tests, Pt embedded ReRAM cells showed more stable repetitive dc cycling characteristics with a larger resistance ratio of approximately 1 × 101 and a longer data retention of over 105 s.

Original languageEnglish
Article number60601
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume31
Issue number6
DOIs
Publication statusPublished - 2013 Nov 1

Fingerprint

random access memory
Nitrides
Magnetron sputtering
nitrides
radio frequencies
magnetron sputtering
Nickel
nickel
Data storage equipment
cells
endurance
filaments
Durability
conduction
cycles
Electric potential
electric potential

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering",
abstract = "In this paper, the authors report the forming-free bipolar-switching operation at low set/reset voltages (VSET/VRESET) using a Pt embedded-NiN based resistive random access memory (ReRAM) cell. Compared to conventional NiN based ReRAM cells, the variations in VSET and V RESET were reduced from 1 to 0.4 V and from 0.4 to 0.2 V, respectively, using the Pt embedded ReRAM cells. These results show that the embedded Pt particles might assist in the uniform formation of the conducting filaments in the NiN films, without an initial forming process. In addition, in the endurance and retention tests, Pt embedded ReRAM cells showed more stable repetitive dc cycling characteristics with a larger resistance ratio of approximately 1 × 101 and a longer data retention of over 105 s.",
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T1 - Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering

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AU - Kim, Hee Dong

AU - Kim, Tae Geun

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N2 - In this paper, the authors report the forming-free bipolar-switching operation at low set/reset voltages (VSET/VRESET) using a Pt embedded-NiN based resistive random access memory (ReRAM) cell. Compared to conventional NiN based ReRAM cells, the variations in VSET and V RESET were reduced from 1 to 0.4 V and from 0.4 to 0.2 V, respectively, using the Pt embedded ReRAM cells. These results show that the embedded Pt particles might assist in the uniform formation of the conducting filaments in the NiN films, without an initial forming process. In addition, in the endurance and retention tests, Pt embedded ReRAM cells showed more stable repetitive dc cycling characteristics with a larger resistance ratio of approximately 1 × 101 and a longer data retention of over 105 s.

AB - In this paper, the authors report the forming-free bipolar-switching operation at low set/reset voltages (VSET/VRESET) using a Pt embedded-NiN based resistive random access memory (ReRAM) cell. Compared to conventional NiN based ReRAM cells, the variations in VSET and V RESET were reduced from 1 to 0.4 V and from 0.4 to 0.2 V, respectively, using the Pt embedded ReRAM cells. These results show that the embedded Pt particles might assist in the uniform formation of the conducting filaments in the NiN films, without an initial forming process. In addition, in the endurance and retention tests, Pt embedded ReRAM cells showed more stable repetitive dc cycling characteristics with a larger resistance ratio of approximately 1 × 101 and a longer data retention of over 105 s.

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