Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process

Ju Hyun Park, Hee Dong Kim, Seok Man Hong, Min Ju Yun, Dong Su Jeon, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


The improvement of resistive switching (RS) phenomena of silicon-nitride (SiNx)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiNx films, the oxygen doped SiNx (SiNx:O2)-based ReRAM cells show a lower current (~0.3 μA) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiNx:O2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiNx films can effectively improve the RS characteristics of SiNx-based ReRAM cells.

Original languageEnglish
Pages (from-to)239-242
Number of pages4
JournalPhysica Status Solidi - Rapid Research Letters
Issue number3
Publication statusPublished - 2014 Mar


  • Charge trapping
  • Dangling bonds
  • ReRAM
  • Resistive switching
  • Silicon
  • Silicon nitride

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


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