Improved resistive switching properties by nitrogen doping in tungsten oxide thin films

Seok Man Hong, Hee Dong Kim, Min Ju Yun, Ju Hyun Park, Dong Su Jeon, Tae Geun Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In this study, nitrogen-doped WO<inf>x</inf> thin films are investigated for the improvement of resistive switching (RS) properties. Compared to WO<inf>x</inf> thin films, nitrogen-doped WO<inf>x</inf> thin films exhibit a higher on/off current ratio (a separation of ∼2 orders of magnitude), better endurance (>100 cycles), narrower current dispersion, and longer retention characteristics (>10<sup>4</sup> s). Electrical measurements, X-ray diffraction, and X-ray photoelectron spectroscopy demonstrate that nitrogen in WO<inf>x</inf>:N thin films forms WN nanoclusters and W<inf>x</inf> (O, N) phases, which are beneficial to improve the RS properties inWO<inf>x</inf> thin films; WN nanoclusters can locally enhance the electric field to form stable conductive filament while W<inf>x</inf> (O, N) phases can suppress random migrations of oxygen ions (O2-), leading to stable RS characteristics. Our findings suggest that nitrogen doping method can lead further optimization of the RS characteristics inWO<inf>x</inf> thin films.

Original languageEnglish
Pages (from-to)81-85
Number of pages5
JournalThin Solid Films
Volume583
Issue number1
DOIs
Publication statusPublished - 2015

Keywords

  • Nitrogen doping
  • Resistive random access memories
  • Resistive switching
  • Tungsten oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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