Improved resistive switching properties by nitrogen doping in tungsten oxide thin films

Seok Man Hong, Hee Dong Kim, Min Ju Yun, Ju Hyun Park, Dong Su Jeon, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


In this study, nitrogen-doped WOx thin films are investigated for the improvement of resistive switching (RS) properties. Compared to WOx thin films, nitrogen-doped WOx thin films exhibit a higher on/off current ratio (a separation of ∼2 orders of magnitude), better endurance (>100 cycles), narrower current dispersion, and longer retention characteristics (>104 s). Electrical measurements, X-ray diffraction, and X-ray photoelectron spectroscopy demonstrate that nitrogen in WOx:N thin films forms WN nanoclusters and Wx (O, N) phases, which are beneficial to improve the RS properties inWOx thin films; WN nanoclusters can locally enhance the electric field to form stable conductive filament while Wx (O, N) phases can suppress random migrations of oxygen ions (O2-), leading to stable RS characteristics. Our findings suggest that nitrogen doping method can lead further optimization of the RS characteristics inWOx thin films.

Original languageEnglish
Pages (from-to)81-85
Number of pages5
JournalThin Solid Films
Issue number1
Publication statusPublished - 2015


  • Nitrogen doping
  • Resistive random access memories
  • Resistive switching
  • Tungsten oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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