Improved thermal stability and reduced contact resistance of ohmic contacts on N-Face n-type GaN with laser-assisted doping

Su Jin Kim, Tak Jeong, Tae Geun Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The authors report reduced contact resistance and improved thermal stability of Ti/Al ohmic contacts to N-face n-GaN via laser-assisted Si doping. The contact resistivity of Ti (30 nm)/Al (200 nm) electrodes was reduced from 7.61 ×10-4 to 8.72 ×10-5Ωcm2 by applying laser-assisted Si diffusion to the GaN surface before Ti/Al deposition. Moreover, no degradation in specific contact resistivity was observed for the highly doped samples after annealing at 300 °C. During this process, Si dopant atoms are believed to diffuse into GaN, whereas Ga-N bonds are broken by laser-assisted doping, which eventually increases the number of nitrogen vacancies and generates sites at which Si atoms are substituted for Ga on the GaN surface. This suggestion was verified by secondary ion mass spectrometry and X-ray photoelectron spectroscopy.

Original languageEnglish
Article number6419755
Pages (from-to)372-374
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number3
DOIs
Publication statusPublished - 2013

Keywords

  • Doping
  • GaN
  • N-face
  • laser
  • ohmic contacts

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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