Improved thermal stability of Ag ohmic contacts for GaN-based vertical light-emitting diodes using a Zn capping layer

Jae Seong Park, Joon Woo Jeon, Sungho Jin, Tae Yeon Seong

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report on the improvement of the thermal stability of Ag ohmic contacts for high-power GaN-based vertical light-emitting diodes (LEDs) using a Zn capping layer. The 20-nm-thick Zn capping layer suppresses agglomeration by forming ZnO. Blue LEDs fabricated with the AgZn contacts give higher output power than do LEDs with Ag only contacts. LEDs with the 500C-annealed AgZn contacts exhibit 34 higher output power (at 20 mA) than LEDs with the 500C-annealed Ag only contacts. X-ray photoemission spectroscopy measurements are performed to describe the temperature dependence of the electrical properties of LEDs with the AgZn contacts.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume15
Issue number4
DOIs
Publication statusPublished - 2012 Feb 27

Fingerprint

Ohmic contacts
Light emitting diodes
electric contacts
Thermodynamic stability
thermal stability
light emitting diodes
output
Photoelectron spectroscopy
X ray spectroscopy
agglomeration
Electric properties
photoelectric emission
Agglomeration
electrical properties
temperature dependence
spectroscopy
x rays

ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

Improved thermal stability of Ag ohmic contacts for GaN-based vertical light-emitting diodes using a Zn capping layer. / Park, Jae Seong; Jeon, Joon Woo; Jin, Sungho; Seong, Tae Yeon.

In: Electrochemical and Solid-State Letters, Vol. 15, No. 4, 27.02.2012.

Research output: Contribution to journalArticle

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