Abstract
We report on the improvement of the thermal stability of Ag ohmic contacts for high-power GaN-based vertical light-emitting diodes (LEDs) using a Zn capping layer. The 20-nm-thick Zn capping layer suppresses agglomeration by forming ZnO. Blue LEDs fabricated with the AgZn contacts give higher output power than do LEDs with Ag only contacts. LEDs with the 500C-annealed AgZn contacts exhibit 34 higher output power (at 20 mA) than LEDs with the 500C-annealed Ag only contacts. X-ray photoemission spectroscopy measurements are performed to describe the temperature dependence of the electrical properties of LEDs with the AgZn contacts.
| Original language | English |
|---|---|
| Journal | Electrochemical and Solid-State Letters |
| Volume | 15 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2012 Feb 27 |
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ASJC Scopus subject areas
- Electrochemistry
- Electrical and Electronic Engineering
- Materials Science(all)
- Chemical Engineering(all)
- Physical and Theoretical Chemistry
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Improved thermal stability of Ag ohmic contacts for GaN-based vertical light-emitting diodes using a Zn capping layer. / Park, Jae Seong; Jeon, Joon Woo; Jin, Sungho; Seong, Tae Yeon.
In: Electrochemical and Solid-State Letters, Vol. 15, No. 4, 27.02.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Improved thermal stability of Ag ohmic contacts for GaN-based vertical light-emitting diodes using a Zn capping layer
AU - Park, Jae Seong
AU - Jeon, Joon Woo
AU - Jin, Sungho
AU - Seong, Tae Yeon
PY - 2012/2/27
Y1 - 2012/2/27
N2 - We report on the improvement of the thermal stability of Ag ohmic contacts for high-power GaN-based vertical light-emitting diodes (LEDs) using a Zn capping layer. The 20-nm-thick Zn capping layer suppresses agglomeration by forming ZnO. Blue LEDs fabricated with the AgZn contacts give higher output power than do LEDs with Ag only contacts. LEDs with the 500C-annealed AgZn contacts exhibit 34 higher output power (at 20 mA) than LEDs with the 500C-annealed Ag only contacts. X-ray photoemission spectroscopy measurements are performed to describe the temperature dependence of the electrical properties of LEDs with the AgZn contacts.
AB - We report on the improvement of the thermal stability of Ag ohmic contacts for high-power GaN-based vertical light-emitting diodes (LEDs) using a Zn capping layer. The 20-nm-thick Zn capping layer suppresses agglomeration by forming ZnO. Blue LEDs fabricated with the AgZn contacts give higher output power than do LEDs with Ag only contacts. LEDs with the 500C-annealed AgZn contacts exhibit 34 higher output power (at 20 mA) than LEDs with the 500C-annealed Ag only contacts. X-ray photoemission spectroscopy measurements are performed to describe the temperature dependence of the electrical properties of LEDs with the AgZn contacts.
UR - http://www.scopus.com/inward/record.url?scp=84863178397&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863178397&partnerID=8YFLogxK
U2 - 10.1149/2.002205esl
DO - 10.1149/2.002205esl
M3 - Article
AN - SCOPUS:84863178397
VL - 15
JO - Electrochemical and Solid-State Letters
JF - Electrochemical and Solid-State Letters
SN - 1099-0062
IS - 4
ER -