Improved thermal stability of Ag ohmic contacts for GaN-based vertical light-emitting diodes using a Zn capping layer

Jae Seong Park; Joon Woo Jeon; Sungho Jin; Tae Yeon Seong

doi:10.1149/2.002205esl

Improved thermal stability of Ag ohmic contacts for GaN-based vertical light-emitting diodes using a Zn capping layer

Jae Seong Park, Joon Woo Jeon, Sungho Jin, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report on the improvement of the thermal stability of Ag ohmic contacts for high-power GaN-based vertical light-emitting diodes (LEDs) using a Zn capping layer. The 20-nm-thick Zn capping layer suppresses agglomeration by forming ZnO. Blue LEDs fabricated with the AgZn contacts give higher output power than do LEDs with Ag only contacts. LEDs with the 500C-annealed AgZn contacts exhibit 34 higher output power (at 20 mA) than LEDs with the 500C-annealed Ag only contacts. X-ray photoemission spectroscopy measurements are performed to describe the temperature dependence of the electrical properties of LEDs with the AgZn contacts.

Original language	English
Pages (from-to)	H130-H132
Journal	Electrochemical and Solid-State Letters
Volume	15
Issue number	4
DOIs	https://doi.org/10.1149/2.002205esl
Publication status	Published - 2012

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "We report on the improvement of the thermal stability of Ag ohmic contacts for high-power GaN-based vertical light-emitting diodes (LEDs) using a Zn capping layer. The 20-nm-thick Zn capping layer suppresses agglomeration by forming ZnO. Blue LEDs fabricated with the AgZn contacts give higher output power than do LEDs with Ag only contacts. LEDs with the 500C-annealed AgZn contacts exhibit 34 higher output power (at 20 mA) than LEDs with the 500C-annealed Ag only contacts. X-ray photoemission spectroscopy measurements are performed to describe the temperature dependence of the electrical properties of LEDs with the AgZn contacts.",

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AU - Seong, Tae Yeon

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AB - We report on the improvement of the thermal stability of Ag ohmic contacts for high-power GaN-based vertical light-emitting diodes (LEDs) using a Zn capping layer. The 20-nm-thick Zn capping layer suppresses agglomeration by forming ZnO. Blue LEDs fabricated with the AgZn contacts give higher output power than do LEDs with Ag only contacts. LEDs with the 500C-annealed AgZn contacts exhibit 34 higher output power (at 20 mA) than LEDs with the 500C-annealed Ag only contacts. X-ray photoemission spectroscopy measurements are performed to describe the temperature dependence of the electrical properties of LEDs with the AgZn contacts.

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Improved thermal stability of Ag ohmic contacts for GaN-based vertical light-emitting diodes using a Zn capping layer

Abstract

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