Improved threshold switching characteristics of vanadium oxide/oxynitride-based multilayer selector in a cross-point array

Dae Yun Kang, Adila Rani, Kyoung Joung Yoo, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

Abstract

We developed a selector device with the bi-directional threshold switching characteristics of vanadium oxide (VOx) by implementing vanadium oxynitride (VOx:Ny) in a sandwich structure. The proposed device with the Pt/VOx:Ny/VOx/VOx:Ny/Pt structure as opposed to a cell with a Pt/VOx/Pt structure exhibits lower off-current and stable switching characteristics. The elements of the device were analyzed using high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy, and its memory characteristics were verified by applying the Pt/VOx:Ny/VOx/VOx:Ny/Pt selector to amorphous indium-gallium-zinc oxide-based resistive switching (RS) devices in the 1 selector-1 ReRAM structure. Our device shows stable RS properties over 100 DC cycles and> 106 AC cycles, an improved ON/OFF ratio (~67), a high switching speed (<110 ns), and a rectification ratio of ~1 × 103 when the read margin is 10%.

Original languageEnglish
Article number166192
JournalJournal of Alloys and Compounds
Volume922
DOIs
Publication statusPublished - 2022 Nov 20

Keywords

  • Insulator-metal transition material
  • Resistive switching
  • Selector device
  • Vanadium oxynitride

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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