Improved uniformity in the switching characteristics of ZnO-based memristors using Ti sub-oxide layers

Ju Hyun Park, Dong Su Jeon, Tae Geun Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this paper, improved uniformity in the resistive switching (RS) characteristics of ZnO-based memristors using Ti sub-oxide layers (metallic TiOx, insulating TiOy) is reported. Compared with Pt/Ti/ZnO/Pt cells, more reliable and reproducible RS operation was observed in Pt/TiOx (or TiOy)/ZnO/Pt cells, particularly with insulating TiOy, because Ti sub-oxide layers play the role of oxygen reservoirs that help rupture the conducting filament. By comparison, Pt/TiOy/ZnO/Pt cells exhibited the best performance, with a large on/off ratio (∼105) at a read voltage of 0.4 V, and highly stable low- and high-resistive state operation for 100 direct-current sweep cycles.

Original languageEnglish
Article number015104
JournalJournal of Physics D: Applied Physics
Volume50
Issue number1
DOIs
Publication statusPublished - 2017 Jan 11

Keywords

  • memristor
  • oxygen reservoir
  • resistive switching
  • zince oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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