Improvement in tunability and dielectric loss of bstz ferroelectric thin films using post-annealing

Jong Yoon Ha, Chong-Yun Kang, Ji Won Choi, Sung Hun Sim, S. F. Karmanenko, Seok Jin Yoon, Hyun Jai Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The change in dielectric constant of ferroelectric materials as a function of electric field is the key to wide range of applications such as tunable oscillators, delay lines, and phase shifters. The effect of the post-annealing on the dielectric properties of (Ba0.6Sr0.4)(Ti0.9Zr0.1)O3 (BSTZ) thin films deposited by Pulsed Laser Deposition is studied. BSTZ ferroelectric thin films showed simple cubic perovskite structure having (200) preferred orientation independent on deposition conditions. Preferred orientation slightly increased after post-annealing. With increasing the oxygen pressure, the dielectric loss of ferroelectric thin films decreased due to the oxygen vacancies. The reason why the dielectric constant increased was due to expansion of unit cell volume leading the increase of ion polarizability. The structure of ferroelectric thin film did not change after post-annealing. The grain size, dielectric constant and tunability were increased; however dielectric loss was decreased after annealing. The microstructure of ferroelectric thin film was one of the important facts(stress between thin films and substrates, thermal conductivity etc) effecting the dielectric properties such as dielectric constant, dielectric loss and tunability etc. Microwave dielectric properties of (Ba0.6Sr0.4)(Ti0.9Zr0.1)O3 ferroelectric thin film were obtained at deposition temperature 750C, oxygen pressure 200 mTorr, and post-annealing conditions 1100C for 1h: dielectric constant 2060, dielectric loss 0.0026 and tunability 25.3%.

Original languageEnglish
Pages (from-to)85-94
Number of pages10
JournalIntegrated Ferroelectrics
Volume86
Issue number1
DOIs
Publication statusPublished - 2006 Jan 1

Fingerprint

Ferroelectric thin films
Dielectric losses
dielectric loss
Permittivity
Annealing
annealing
Dielectric properties
thin films
permittivity
dielectric properties
Oxygen
Thin films
oxygen
Phase shifters
Electric delay lines
Oxygen vacancies
Pulsed laser deposition
Perovskite
Ferroelectric materials
ferroelectric materials

Keywords

  • BSTZ
  • Dielectric loss
  • Ferroelectric
  • PLD
  • Tunable device

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Control and Systems Engineering

Cite this

Ha, J. Y., Kang, C-Y., Choi, J. W., Sim, S. H., Karmanenko, S. F., Yoon, S. J., & Kim, H. J. (2006). Improvement in tunability and dielectric loss of bstz ferroelectric thin films using post-annealing. Integrated Ferroelectrics, 86(1), 85-94. https://doi.org/10.1080/10584580601085172

Improvement in tunability and dielectric loss of bstz ferroelectric thin films using post-annealing. / Ha, Jong Yoon; Kang, Chong-Yun; Choi, Ji Won; Sim, Sung Hun; Karmanenko, S. F.; Yoon, Seok Jin; Kim, Hyun Jai.

In: Integrated Ferroelectrics, Vol. 86, No. 1, 01.01.2006, p. 85-94.

Research output: Contribution to journalArticle

Ha, JY, Kang, C-Y, Choi, JW, Sim, SH, Karmanenko, SF, Yoon, SJ & Kim, HJ 2006, 'Improvement in tunability and dielectric loss of bstz ferroelectric thin films using post-annealing', Integrated Ferroelectrics, vol. 86, no. 1, pp. 85-94. https://doi.org/10.1080/10584580601085172
Ha, Jong Yoon ; Kang, Chong-Yun ; Choi, Ji Won ; Sim, Sung Hun ; Karmanenko, S. F. ; Yoon, Seok Jin ; Kim, Hyun Jai. / Improvement in tunability and dielectric loss of bstz ferroelectric thin films using post-annealing. In: Integrated Ferroelectrics. 2006 ; Vol. 86, No. 1. pp. 85-94.
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