Improvement of blue InGaN/GaN light-emitting diodes with graded indium composition wells and barriers

Ho Young Chung, Kie Young Woo, Su Jin Kim, Tae Geun Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We present a numerical study on the effect of graded indium well and barrier structures having different compositions in InGaN/GaN-based light-emitting diodes (LEDs) on their optical and electrical properties. Compared with conventional LEDs, the output power of the proposed LEDs was found to increase by a factor of ~2.4, and the efficiency droop reduced greatly. In addition, the turn-on voltage was reduced by using an InGaN well and barrier structure having a graded indium composition. These improvements are believed to result from the enhancement in the hole-injection efficiency, as well as the spatial distribution overlap between the electrons and holes in multiple quantum wells.

Original languageEnglish
Pages (from-to)282-286
Number of pages5
JournalOptics Communications
Volume331
DOIs
Publication statusPublished - 2014 Nov 15

Fingerprint

Indium
Light emitting diodes
indium
light emitting diodes
Chemical analysis
Spatial distribution
Semiconductor quantum wells
spatial distribution
Electric properties
Optical properties
electrical properties
quantum wells
injection
optical properties
Electrons
augmentation
output
Electric potential
electric potential
electrons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry

Cite this

Improvement of blue InGaN/GaN light-emitting diodes with graded indium composition wells and barriers. / Chung, Ho Young; Woo, Kie Young; Kim, Su Jin; Kim, Tae Geun.

In: Optics Communications, Vol. 331, 15.11.2014, p. 282-286.

Research output: Contribution to journalArticle

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