TY - JOUR
T1 - Improvement of blue InGaN/GaN light-emitting diodes with graded indium composition wells and barriers
AU - Chung, Ho Young
AU - Woo, Kie Young
AU - Kim, Su Jin
AU - Kim, Tae Geun
N1 - Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean government (No. 2011-0028769 ).
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2014/11/15
Y1 - 2014/11/15
N2 - We present a numerical study on the effect of graded indium well and barrier structures having different compositions in InGaN/GaN-based light-emitting diodes (LEDs) on their optical and electrical properties. Compared with conventional LEDs, the output power of the proposed LEDs was found to increase by a factor of ~2.4, and the efficiency droop reduced greatly. In addition, the turn-on voltage was reduced by using an InGaN well and barrier structure having a graded indium composition. These improvements are believed to result from the enhancement in the hole-injection efficiency, as well as the spatial distribution overlap between the electrons and holes in multiple quantum wells.
AB - We present a numerical study on the effect of graded indium well and barrier structures having different compositions in InGaN/GaN-based light-emitting diodes (LEDs) on their optical and electrical properties. Compared with conventional LEDs, the output power of the proposed LEDs was found to increase by a factor of ~2.4, and the efficiency droop reduced greatly. In addition, the turn-on voltage was reduced by using an InGaN well and barrier structure having a graded indium composition. These improvements are believed to result from the enhancement in the hole-injection efficiency, as well as the spatial distribution overlap between the electrons and holes in multiple quantum wells.
KW - Efficiency droop
KW - Internal quantum efficiency
KW - Light-emitting diodes
KW - Numerical simulation
KW - Quantum well and barrier
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U2 - 10.1016/j.optcom.2014.06.010
DO - 10.1016/j.optcom.2014.06.010
M3 - Comment/debate
AN - SCOPUS:84904024804
SN - 0030-4018
VL - 331
SP - 282
EP - 286
JO - Optics Communications
JF - Optics Communications
ER -