Improvement of carrier capture efficiency of short-period GaAs/AlGaAs quantum wire array by a new lithography method

Tae Geun Kim, Eun Kyu Kim, Suk Ki Min, Jung ho Park

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Short-period GaAs/AlGaAs quantum wire array (QWA) was fabricated by metalorganic chemical vapor deposition on the GaAs substrate with submicron gratings. A strong photoluminescence signal derived from highly dense QWA was detected in the as-grown sample. To identify the signal more clearly, all the layers except QWR regions should be removed. However, the small dimension of the sample made it difficult to do that with conventional lithography techniques. We have developed a novel lithography technique which can be applied to nonplanar structures. We could completely remove the (100) and the (111)A quantum well (QW) layers using the technique. As a result, we could clearly observe the optical properties of short-period QWA by improving the carrier capture efficiency of QWR regions.

Original languageEnglish
Pages (from-to)955-956
Number of pages2
JournalApplied Physics Letters
Volume69
Issue number7
Publication statusPublished - 1996 Aug 12

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quantum wires
aluminum gallium arsenides
lithography
metalorganic chemical vapor deposition
quantum wells
gratings
photoluminescence
optical properties

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Improvement of carrier capture efficiency of short-period GaAs/AlGaAs quantum wire array by a new lithography method. / Kim, Tae Geun; Kim, Eun Kyu; Min, Suk Ki; Park, Jung ho.

In: Applied Physics Letters, Vol. 69, No. 7, 12.08.1996, p. 955-956.

Research output: Contribution to journalArticle

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