Improvement of catastrophic optical damage (COD) level for high-power 0.98-μm GaInAs-GaInP laser diodes using impurity induced layer disordering

J. K. Lee; K. H. Park; D. H. Jang; H. S. Cho; C. S. Park; K. E. Pyun; J. Jeong

doi:10.1109/68.705598

Improvement of catastrophic optical damage (COD) level for high-power 0.98-μm GaInAs-GaInP laser diodes using impurity induced layer disordering

J. K. Lee, K. H. Park, D. H. Jang, H. S. Cho, C. S. Park, K. E. Pyun, J. Jeong

Department of Brain and Cognitive Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We investigate improvement of catastrophic optical damage (COD) level for Al-free 0.98-μm ridge waveguide laser diodes (LD's) using the impurity induced layer disordering (HLD) process applied near the facets. The IILD is used for the purpose of forming transparent windows near both facets of the LD's utilizing its ability to increase bandgap energy of the GaInAs-GaInAsP strained quantum-well (QW) active layer. Improvement of the COD level by at least 1.65 times compared to the conventional LD's is obtained for the LD's with Si⁺ implantation followed by annealing at 900°C for 10 min.

Original language	English
Pages (from-to)	1226-1228
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	10
Issue number	9
DOIs	https://doi.org/10.1109/68.705598
Publication status	Published - 1998 Sept

Keywords

Catastrophic optical damage (COD)
Impurity induced layer disordering (IILD)
Optical pumping
Semiconductor lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Improvement of catastrophic optical damage (COD) level for high-power 0.98-μm GaInAs-GaInP laser diodes using impurity induced layer disordering",

abstract = "We investigate improvement of catastrophic optical damage (COD) level for Al-free 0.98-μm ridge waveguide laser diodes (LD's) using the impurity induced layer disordering (HLD) process applied near the facets. The IILD is used for the purpose of forming transparent windows near both facets of the LD's utilizing its ability to increase bandgap energy of the GaInAs-GaInAsP strained quantum-well (QW) active layer. Improvement of the COD level by at least 1.65 times compared to the conventional LD's is obtained for the LD's with Si+ implantation followed by annealing at 900°C for 10 min.",

keywords = "Catastrophic optical damage (COD), Impurity induced layer disordering (IILD), Optical pumping, Semiconductor lasers",

author = "Lee, {J. K.} and Park, {K. H.} and Jang, {D. H.} and Cho, {H. S.} and Park, {C. S.} and Pyun, {K. E.} and J. Jeong",

note = "Funding Information: Manuscript received March 9, 1998; revised May 11, 1998. This work was supported by Korea Telecom. J. K. Lee is with the Compound Semiconductor Research Department, Electronics and Telecommunications Research Institute, Yusong, Taejon 305-600, Korea. He is also with the Department of Electronics Engineering, Korea University, Anam-Dong, Sungbuk-Ku, Seoul 136-701, Korea. K. H. Park, D. H. Jang, H. S. Cho, C. S. Park, and K. E. Pyun are with the Compound Semiconductor Research Department, Electronics and Telecommunications Research Institute, Yusong, Taejon 305-600, Korea. J. Jeong is with the Department of Radio Engineering, Korea University, Anam-Dong, Sungbuk-Ku, Seoul 136-701, Korea. Publisher Item Identifier S 1041-1135(98)06270-3.",

year = "1998",

month = sep,

doi = "10.1109/68.705598",

language = "English",

volume = "10",

pages = "1226--1228",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Improvement of catastrophic optical damage (COD) level for high-power 0.98-μm GaInAs-GaInP laser diodes using impurity induced layer disordering

AU - Lee, J. K.

AU - Park, K. H.

AU - Jang, D. H.

AU - Cho, H. S.

AU - Park, C. S.

AU - Pyun, K. E.

AU - Jeong, J.

N1 - Funding Information: Manuscript received March 9, 1998; revised May 11, 1998. This work was supported by Korea Telecom. J. K. Lee is with the Compound Semiconductor Research Department, Electronics and Telecommunications Research Institute, Yusong, Taejon 305-600, Korea. He is also with the Department of Electronics Engineering, Korea University, Anam-Dong, Sungbuk-Ku, Seoul 136-701, Korea. K. H. Park, D. H. Jang, H. S. Cho, C. S. Park, and K. E. Pyun are with the Compound Semiconductor Research Department, Electronics and Telecommunications Research Institute, Yusong, Taejon 305-600, Korea. J. Jeong is with the Department of Radio Engineering, Korea University, Anam-Dong, Sungbuk-Ku, Seoul 136-701, Korea. Publisher Item Identifier S 1041-1135(98)06270-3.

PY - 1998/9

Y1 - 1998/9

N2 - We investigate improvement of catastrophic optical damage (COD) level for Al-free 0.98-μm ridge waveguide laser diodes (LD's) using the impurity induced layer disordering (HLD) process applied near the facets. The IILD is used for the purpose of forming transparent windows near both facets of the LD's utilizing its ability to increase bandgap energy of the GaInAs-GaInAsP strained quantum-well (QW) active layer. Improvement of the COD level by at least 1.65 times compared to the conventional LD's is obtained for the LD's with Si+ implantation followed by annealing at 900°C for 10 min.

AB - We investigate improvement of catastrophic optical damage (COD) level for Al-free 0.98-μm ridge waveguide laser diodes (LD's) using the impurity induced layer disordering (HLD) process applied near the facets. The IILD is used for the purpose of forming transparent windows near both facets of the LD's utilizing its ability to increase bandgap energy of the GaInAs-GaInAsP strained quantum-well (QW) active layer. Improvement of the COD level by at least 1.65 times compared to the conventional LD's is obtained for the LD's with Si+ implantation followed by annealing at 900°C for 10 min.

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Improvement of catastrophic optical damage (COD) level for high-power 0.98-μm GaInAs-GaInP laser diodes using impurity induced layer disordering

Abstract

Keywords

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