Improvement of catastrophic optical damage (COD) level for high-power 0.98-μm GaInAs-GaInP laser diodes using impurity induced layer disordering

J. K. Lee, K. H. Park, D. H. Jang, H. S. Cho, C. S. Park, K. E. Pyun, Jichai Jeong

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We investigate improvement of catastrophic optical damage (COD) level for Al-free 0.98-μm ridge waveguide laser diodes (LD's) using the impurity induced layer disordering (HLD) process applied near the facets. The IILD is used for the purpose of forming transparent windows near both facets of the LD's utilizing its ability to increase bandgap energy of the GaInAs-GaInAsP strained quantum-well (QW) active layer. Improvement of the COD level by at least 1.65 times compared to the conventional LD's is obtained for the LD's with Si+ implantation followed by annealing at 900°C for 10 min.

Original languageEnglish
Pages (from-to)1226-1228
Number of pages3
JournalIEEE Photonics Technology Letters
Volume10
Issue number9
DOIs
Publication statusPublished - 1998 Sep 1

Fingerprint

Semiconductor lasers
semiconductor lasers
Impurities
damage
impurities
flat surfaces
Ridge waveguides
waveguide lasers
Semiconductor quantum wells
ridges
implantation
Energy gap
quantum wells
Annealing
annealing
energy

Keywords

  • Catastrophic optical damage (COD)
  • Impurity induced layer disordering (IILD)
  • Optical pumping
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

Improvement of catastrophic optical damage (COD) level for high-power 0.98-μm GaInAs-GaInP laser diodes using impurity induced layer disordering. / Lee, J. K.; Park, K. H.; Jang, D. H.; Cho, H. S.; Park, C. S.; Pyun, K. E.; Jeong, Jichai.

In: IEEE Photonics Technology Letters, Vol. 10, No. 9, 01.09.1998, p. 1226-1228.

Research output: Contribution to journalArticle

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