Improvement of electrical and optical properties of p-GaN Ohmic metals under ultraviolet light irradiation annealing processes

S. W. Chae, S. K. Yoon, J. S. Kwak, Y. H. Park, Tae Geun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report the improvement of electrical and optical properties of p-GaN Ohmic metals, ZnNi (10 nm) Au (10 nm), by ultraviolet (UV) light irradiation. After UV light irradiation, the specific contact resistance of p-GaN decreased slightly from 2.99× 10-4 to 2.54× 10-4 cm2, while the transmittance of the contact layer increased form 75% to 85% at a wavelength of 460 nm. In addition, the forward voltage of InGaNGaN light-emitting diode chip at 20 mA decreased from 3.55 to 3.45 V, and the output power increased form 18 to 25 mW by UV light irradiation. The low resistance and high transmittance of the p-GaN Ohmic metals are attributed to the reduced Shottky barrier by the formation of gallium oxide and the increased oxidation of p -Ohmic metals, respectively, due to ozone generated form oxygen during UV light irradiation.

Original languageEnglish
Pages (from-to)634-636
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume24
Issue number3
DOIs
Publication statusPublished - 2006 May 22

Fingerprint

ultraviolet radiation
Electric properties
Optical properties
Metals
electrical properties
Irradiation
Annealing
optical properties
irradiation
annealing
metals
transmittance
gallium oxides
Ozone
low resistance
Gallium
Contact resistance
contact resistance
ozone
Light emitting diodes

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Improvement of electrical and optical properties of p-GaN Ohmic metals under ultraviolet light irradiation annealing processes. / Chae, S. W.; Yoon, S. K.; Kwak, J. S.; Park, Y. H.; Kim, Tae Geun.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 24, No. 3, 22.05.2006, p. 634-636.

Research output: Contribution to journalArticle

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AU - Yoon, S. K.

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AU - Kim, Tae Geun

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N2 - We report the improvement of electrical and optical properties of p-GaN Ohmic metals, ZnNi (10 nm) Au (10 nm), by ultraviolet (UV) light irradiation. After UV light irradiation, the specific contact resistance of p-GaN decreased slightly from 2.99× 10-4 to 2.54× 10-4 cm2, while the transmittance of the contact layer increased form 75% to 85% at a wavelength of 460 nm. In addition, the forward voltage of InGaNGaN light-emitting diode chip at 20 mA decreased from 3.55 to 3.45 V, and the output power increased form 18 to 25 mW by UV light irradiation. The low resistance and high transmittance of the p-GaN Ohmic metals are attributed to the reduced Shottky barrier by the formation of gallium oxide and the increased oxidation of p -Ohmic metals, respectively, due to ozone generated form oxygen during UV light irradiation.

AB - We report the improvement of electrical and optical properties of p-GaN Ohmic metals, ZnNi (10 nm) Au (10 nm), by ultraviolet (UV) light irradiation. After UV light irradiation, the specific contact resistance of p-GaN decreased slightly from 2.99× 10-4 to 2.54× 10-4 cm2, while the transmittance of the contact layer increased form 75% to 85% at a wavelength of 460 nm. In addition, the forward voltage of InGaNGaN light-emitting diode chip at 20 mA decreased from 3.55 to 3.45 V, and the output power increased form 18 to 25 mW by UV light irradiation. The low resistance and high transmittance of the p-GaN Ohmic metals are attributed to the reduced Shottky barrier by the formation of gallium oxide and the increased oxidation of p -Ohmic metals, respectively, due to ozone generated form oxygen during UV light irradiation.

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