Improvement of external quantum efficiency depressed by visible light-absorbing hole transport material in solid-state semiconductor-sensitized heterojunction solar cells

Choong Sun Lim, Sang Hyuk Im, Jeong Ah Chang, Yong Hui Lee, Hi Jung Kim, Sang Il Seok

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A mesoporous (mp)-TiO 2/Sb 2S 3/P3HT [poly(3-hexylthiophene)] heterojunction solar cell displays reduced external quantum efficiency (EQE) at a wavelength of approximately 650 nm. This loss in EQE is due to incomplete charge carrier transport because the transportation of charge carriers generated in P3HT by the absorption of light into Sb 2S 3 was inefficient, and consequently, the carriers recombined. The depression of the EQE was greatly relieved by introducing the porous structure formed by thermal decomposition of 2,2′- azobisisobutyronitrile (AIBN) into the P3HT layer.

Original languageEnglish
Pages (from-to)429-432
Number of pages4
JournalNanoscale
Volume4
Issue number2
DOIs
Publication statusPublished - 2012 Jan 21
Externally publishedYes

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Quantum efficiency
Heterojunctions
Solar cells
Semiconductor materials
Charge carriers
Carrier transport
Pyrolysis
Display devices
Wavelength

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Improvement of external quantum efficiency depressed by visible light-absorbing hole transport material in solid-state semiconductor-sensitized heterojunction solar cells. / Lim, Choong Sun; Im, Sang Hyuk; Chang, Jeong Ah; Lee, Yong Hui; Kim, Hi Jung; Seok, Sang Il.

In: Nanoscale, Vol. 4, No. 2, 21.01.2012, p. 429-432.

Research output: Contribution to journalArticle

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