Improvement of field emission from printed carbon nanotubes by a critical bias field

H. J. Lee, S. I. Moon, J. K. Kim, Y. D. Lee, S. Nahm, J. E. Yoo, J. H. Han, Y. H. Lee, S. W. Hwang, B. K. Ju

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Abstract

By applying a critical bias field instead of conventional surface treatments, the electron emission properties of screen-printed nanotubes were investigated through scanning electron microscopy and emission current-voltage characteristics. After the surface treatment, at the bias field of 2.5 Vμm, the electron emission current density with good uniform emission sites reached the value of 2.13 mA cm2, which was 400 times higher than that of the untreated sample, and the turn-on voltage decreased markedly from 700 to 460 V. In addition, the enhancement of the alignment of carbon nanotubes to the vertical direction was observed, resulting in an increase in the field-enhancement factor.

Original languageEnglish
Article number016107
JournalJournal of Applied Physics
Volume98
Issue number1
DOIs
Publication statusPublished - 2005 Jul 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Lee, H. J., Moon, S. I., Kim, J. K., Lee, Y. D., Nahm, S., Yoo, J. E., Han, J. H., Lee, Y. H., Hwang, S. W., & Ju, B. K. (2005). Improvement of field emission from printed carbon nanotubes by a critical bias field. Journal of Applied Physics, 98(1), [016107]. https://doi.org/10.1063/1.1953889