Improvement of field-emission properties by formation of Nb-silicide layer on silicon-tip FEAs

J. S. Park, S. Lee, Byeong Kwon Ju, M. H. Oh, J. Jang, D. Jeon

Research output: Contribution to journalArticle

Abstract

Metal silicide on silicon-tip field-emission arrays (FEAs) seems to be a promising way to improve the performance of the silicon-tip FEAs. The niobium-silicide layer was formed on a silicon surface. The Nb-silicide FEAs were prepared by a silicidation process. The formation of the Nb-silicide layer on a silicon surface was confirmed by using X-ray diffractometry (XRD). The current-voltage characteristics and the current fluctuation were measured under an ultra-high-vacuum environment using a Kiethley SMU 237 meter. The turn-on voltage of silicon-tip FEAs was decreased from 64 to 47 V by the formation of the Nb-silicide layer on silicon tips, and the emission current fluctuation (2%) was more stable than that of conventional silicon-tip FEAs.

Original languageEnglish
Pages (from-to)241-243
Number of pages3
JournalJournal of the Society for Information Display
Volume7
Issue number4
Publication statusPublished - 1999 Dec 1
Externally publishedYes

Fingerprint

Silicon
Field emission
field emission
silicon
self maneuvering units
Niobium
Ultrahigh vacuum
electric potential
Current voltage characteristics
niobium
X ray diffraction analysis
ultrahigh vacuum
Metals
Electric potential
metals
x rays

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Improvement of field-emission properties by formation of Nb-silicide layer on silicon-tip FEAs. / Park, J. S.; Lee, S.; Ju, Byeong Kwon; Oh, M. H.; Jang, J.; Jeon, D.

In: Journal of the Society for Information Display, Vol. 7, No. 4, 01.12.1999, p. 241-243.

Research output: Contribution to journalArticle

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AU - Jeon, D.

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