Improvement of field-emission properties by formation of Nb-silicide layer on silicon-tip FEAs

J. S. Park, S. Lee, B. K. Ju, M. H. Oh, J. Jang, D. Jeon

Research output: Contribution to journalConference article

Abstract

Metal silicide on silicon-tip field-emission arrays (FEAs) seems to be a promising way to improve the performance of the silicon-tip FEAs. The niobium-silicide layer was formed on a silicon surface. The Nb-silicide FEAs were prepared by a silicidation process. The formation of the Nb-silicide layer on a silicon surface was confirmed by using X-ray diffractometry (XRD). The current-voltage characteristics and the current fluctuation were measured under an ultra-high-vacuum environment using a Kiethley SMU 237 meter. The turn-on voltage of silicon-tip FEAs was decreased from 64 to 47 V by the formation of the Nb-silicide layer on silicon tips, and the emission current fluctuation (2%) was more stable than that of conventional silicon-tip FEAs.

Original languageEnglish
Pages (from-to)241-243
Number of pages3
JournalJournal of the Society for Information Display
Volume7
Issue number4
DOIs
Publication statusPublished - 1999 Jan 1
EventThe 1999 SID International Symposium - San Jose, CA, USA
Duration: 1999 May 181999 May 20

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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