This study examined the effect of CaO addition on grain-boundary conductivity in 10 mol % Gd2O3-doped CeO2containing 500 ppm SiO2as an impurity. The addition of CaO increased the grain-boundary conductivity ∼50 times without affecting the grain-interior conductivity significantly. CaO was incorporated into the CeO2lattice completely, which means that a scavenging reaction between a large CaO-related second phase and siliceous impurity was not the reason for the increased conductivity. After adding CaO, grain boundary structure changed from random to faceted. Configuration change in the grain-boundary segregation in relation to the boundary-structure variation is suggested as a possible reason.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2006 Jan 1|
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering