Abstract
This study examined the effect of CaO addition on grain-boundary conductivity in 10 mol % Gd2O3-doped CeO2containing 500 ppm SiO2as an impurity. The addition of CaO increased the grain-boundary conductivity ∼50 times without affecting the grain-interior conductivity significantly. CaO was incorporated into the CeO2lattice completely, which means that a scavenging reaction between a large CaO-related second phase and siliceous impurity was not the reason for the increased conductivity. After adding CaO, grain boundary structure changed from random to faceted. Configuration change in the grain-boundary segregation in relation to the boundary-structure variation is suggested as a possible reason.
Original language | English |
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Pages (from-to) | A399-A402 |
Journal | Electrochemical and Solid-State Letters |
Volume | 9 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2006 Jan 1 |
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering