Improvement of grain-boundary conduction in SiO2-doped GDC by BaO addition

Seung Young Park, Pyeong Seok Cho, Sung Bo Lee, Hyun Min Park, Jong Heun Lee

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Barium oxide (BaO) was suggested as a scavenger material to mitigate the harmful siliceous intergranular phase in gadolinia-doped ceria (GDC). The addition of 1-5 mol % BaO to GDC specimens containing 500 ppm SiO2 enhanced the grain-boundary conduction by ∼250 times. Transmission electron microscopy and electron probe microanalysis attributed this enhancement to the scavenging of the siliceous phase by the Ba-rich phase. In contrast, the grain-boundary conduction was significantly deteriorated when doped with 0.1-0.2 mol % BaO, which was attributed to the dissolution of BaO into the intergranular phase and the consequent increase in the ion-blocking effect at the grain boundary.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume156
Issue number8
DOIs
Publication statusPublished - 2009 Jul 22

Fingerprint

barium oxides
Gadolinium
Cerium compounds
gadolinium
Barium
Grain boundaries
grain boundaries
conduction
Oxides
Scavenging
scavenging
Electron probe microanalysis
electron probes
microanalysis
dissolving
Dissolution
Ions
Transmission electron microscopy
transmission electron microscopy
barium oxide

ASJC Scopus subject areas

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

Cite this

Improvement of grain-boundary conduction in SiO2-doped GDC by BaO addition. / Park, Seung Young; Cho, Pyeong Seok; Lee, Sung Bo; Park, Hyun Min; Lee, Jong Heun.

In: Journal of the Electrochemical Society, Vol. 156, No. 8, 22.07.2009.

Research output: Contribution to journalArticle

Park, Seung Young ; Cho, Pyeong Seok ; Lee, Sung Bo ; Park, Hyun Min ; Lee, Jong Heun. / Improvement of grain-boundary conduction in SiO2-doped GDC by BaO addition. In: Journal of the Electrochemical Society. 2009 ; Vol. 156, No. 8.
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