Improvement of grain-boundary conductivity of 8 mol % yttria-stabilized zirconia by precursor scavenging of siliceous phase

Jong Heun Lee, Toshiyuki Mori, Ji Guang Li, Takayasu Ikegami, Manabu Komatsu, Hajime Haneda

Research output: Contribution to journalArticle

81 Citations (Scopus)

Abstract

A new method of scavenging highly resistive siliceous phase using two-stage sintering, named as `precursor scavenging,' is suggested for improving the grain-boundary conductivity of 8 mol % yttria-stabilized zirconia (YSZ). The scavenging efficiency and mechanism were studied and compared with those of 8YSZ-Al2O3 composites prepared by various methods using impedance spectroscopy and imaging secondary-ion mass spectroscopy. A heat-treatment at 1200 °C for longer than 20 h before sintering increased grain-boundary conductivity remarkably. The forming of inclusions containing Si was considered to be the origin of scavenging. The grain-interior resistivity was not changed by precursor scavenging, while it increased more than 15% by adding 1 mol % Al2O3 when sintered at 1600 °C. Precursor scavenging, therefore, is a potential and promising way for improving the grain boundary conductivity without deteriorating the grain-interior one.

Original languageEnglish
Pages (from-to)2822-2829
Number of pages8
JournalJournal of the Electrochemical Society
Volume147
Issue number7
DOIs
Publication statusPublished - 2000 Jul 1
Externally publishedYes

Fingerprint

Yttria stabilized zirconia
Scavenging
scavenging
yttria-stabilized zirconia
Grain boundaries
grain boundaries
conductivity
sintering
Sintering
Spectroscopy
heat treatment
mass spectroscopy
Heat treatment
impedance
inclusions
Ions
Imaging techniques
electrical resistivity
composite materials
Composite materials

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Improvement of grain-boundary conductivity of 8 mol % yttria-stabilized zirconia by precursor scavenging of siliceous phase. / Lee, Jong Heun; Mori, Toshiyuki; Li, Ji Guang; Ikegami, Takayasu; Komatsu, Manabu; Haneda, Hajime.

In: Journal of the Electrochemical Society, Vol. 147, No. 7, 01.07.2000, p. 2822-2829.

Research output: Contribution to journalArticle

Lee, Jong Heun ; Mori, Toshiyuki ; Li, Ji Guang ; Ikegami, Takayasu ; Komatsu, Manabu ; Haneda, Hajime. / Improvement of grain-boundary conductivity of 8 mol % yttria-stabilized zirconia by precursor scavenging of siliceous phase. In: Journal of the Electrochemical Society. 2000 ; Vol. 147, No. 7. pp. 2822-2829.
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abstract = "A new method of scavenging highly resistive siliceous phase using two-stage sintering, named as `precursor scavenging,' is suggested for improving the grain-boundary conductivity of 8 mol {\%} yttria-stabilized zirconia (YSZ). The scavenging efficiency and mechanism were studied and compared with those of 8YSZ-Al2O3 composites prepared by various methods using impedance spectroscopy and imaging secondary-ion mass spectroscopy. A heat-treatment at 1200 °C for longer than 20 h before sintering increased grain-boundary conductivity remarkably. The forming of inclusions containing Si was considered to be the origin of scavenging. The grain-interior resistivity was not changed by precursor scavenging, while it increased more than 15{\%} by adding 1 mol {\%} Al2O3 when sintered at 1600 °C. Precursor scavenging, therefore, is a potential and promising way for improving the grain boundary conductivity without deteriorating the grain-interior one.",
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