Improvement of grain-boundary conductivity of 8 mol % yttria-stabilized zirconia by precursor scavenging of siliceous phase

Jong Heun Lee, Toshiyuki Mori, Ji Guang Li, Takayasu Ikegami, Manabu Komatsu, Hajime Haneda

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A new method of scavenging highly resistive siliceous phase using two-stage sintering, named as `precursor scavenging,' is suggested for improving the grain-boundary conductivity of 8 mol % yttria-stabilized zirconia (YSZ). The scavenging efficiency and mechanism were studied and compared with those of 8YSZ-Al2O3 composites prepared by various methods using impedance spectroscopy and imaging secondary-ion mass spectroscopy. A heat-treatment at 1200 °C for longer than 20 h before sintering increased grain-boundary conductivity remarkably. The forming of inclusions containing Si was considered to be the origin of scavenging. The grain-interior resistivity was not changed by precursor scavenging, while it increased more than 15% by adding 1 mol % Al2O3 when sintered at 1600 °C. Precursor scavenging, therefore, is a potential and promising way for improving the grain boundary conductivity without deteriorating the grain-interior one.

Original languageEnglish
Pages (from-to)2822-2829
Number of pages8
JournalJournal of the Electrochemical Society
Issue number7
Publication statusPublished - 2000 Jul 1
Externally publishedYes


ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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