Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation

J. K. Lee, K. H. Park, D. H. Jang, H. S. Cho, E. S. Nam, K. E. Pyun, J. Jeong

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation.

Original languageEnglish
Pages (from-to)140-142
Number of pages3
JournalIEEE Photonics Technology Letters
Volume12
Issue number2
DOIs
Publication statusPublished - 2000 Feb

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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