Abstract
We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation.
| Original language | English |
|---|---|
| Pages (from-to) | 140-142 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 12 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2000 Feb 1 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
- Atomic and Molecular Physics, and Optics
Cite this
Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation. / Lee, J. K.; Park, K. H.; Jang, D. H.; Cho, H. S.; Nam, E. S.; Pyun, K. E.; Jeong, Jichai.
In: IEEE Photonics Technology Letters, Vol. 12, No. 2, 01.02.2000, p. 140-142.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation
AU - Lee, J. K.
AU - Park, K. H.
AU - Jang, D. H.
AU - Cho, H. S.
AU - Nam, E. S.
AU - Pyun, K. E.
AU - Jeong, Jichai
PY - 2000/2/1
Y1 - 2000/2/1
N2 - We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation.
AB - We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation.
UR - http://www.scopus.com/inward/record.url?scp=0034135726&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034135726&partnerID=8YFLogxK
U2 - 10.1109/68.823496
DO - 10.1109/68.823496
M3 - Article
AN - SCOPUS:0034135726
VL - 12
SP - 140
EP - 142
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 2
ER -