Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation

J. K. Lee, K. H. Park, D. H. Jang, H. S. Cho, E. S. Nam, K. E. Pyun, Jichai Jeong

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation.

Original languageEnglish
Pages (from-to)140-142
Number of pages3
JournalIEEE Photonics Technology Letters
Volume12
Issue number2
DOIs
Publication statusPublished - 2000 Feb 1

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beam steering
High power lasers
Ion implantation
high power lasers
ion implantation
ridges
Ridge waveguides
waveguide lasers
Lasers
Ions
Ion Channels
causes
excitation
ions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

Cite this

Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation. / Lee, J. K.; Park, K. H.; Jang, D. H.; Cho, H. S.; Nam, E. S.; Pyun, K. E.; Jeong, Jichai.

In: IEEE Photonics Technology Letters, Vol. 12, No. 2, 01.02.2000, p. 140-142.

Research output: Contribution to journalArticle

Lee, J. K. ; Park, K. H. ; Jang, D. H. ; Cho, H. S. ; Nam, E. S. ; Pyun, K. E. ; Jeong, Jichai. / Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation. In: IEEE Photonics Technology Letters. 2000 ; Vol. 12, No. 2. pp. 140-142.
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