Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation

J. K. Lee; K. H. Park; D. H. Jang; H. S. Cho; E. S. Nam; K. E. Pyun; J. Jeong

doi:10.1109/68.823496

Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation

J. K. Lee, K. H. Park, D. H. Jang, H. S. Cho, E. S. Nam, K. E. Pyun, J. Jeong

Department of Brain and Cognitive Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation.

Original language	English
Pages (from-to)	140-142
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	12
Issue number	2
DOIs	https://doi.org/10.1109/68.823496
Publication status	Published - 2000 Feb

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation",

abstract = "We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation.",

author = "Lee, {J. K.} and Park, {K. H.} and Jang, {D. H.} and Cho, {H. S.} and Nam, {E. S.} and Pyun, {K. E.} and J. Jeong",

year = "2000",

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doi = "10.1109/68.823496",

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journal = "IEEE Photonics Technology Letters",

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T1 - Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation

AU - Lee, J. K.

AU - Park, K. H.

AU - Jang, D. H.

AU - Cho, H. S.

AU - Nam, E. S.

AU - Pyun, K. E.

AU - Jeong, J.

PY - 2000/2

Y1 - 2000/2

N2 - We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation.

AB - We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation.

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EP - 142

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 2

ER -

Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation

Abstract

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