The plasma surface treatment, using hydrogen gas, of silicon wafers was studied as a pretreatment for silicon direct bonding. Chemical reactions of the hydrogen plasma with the surfaces were used for both surface activation and removal of surface contaminants. Exposure of the silicon wafers to the plasma formed an active oxide layer on the surface. This layer was hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposure time and power. The surface became smoother with shorter plasma exposure time and lower power. In addition, the plasma surface treatment was very efficient in removing the carbon contaminants on the silicon surface. The value of the initial surface energy, as estimated by using the crack propagation method, was 506 mJ/m2, which was up to about three times higher than the value for the conventional direct bonding method using wet chemical treatments.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2000 Dec|
ASJC Scopus subject areas
- Physics and Astronomy(all)