Improvement of silicon direct bonding using surfaces activated by hydrogen plasma treatment

Woo Beom Choi, Chul Min Ju, Jong Seok Lee, Man Young Sung

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The plasma surface treatment, using hydrogen gas, of silicon wafers was studied as a pretreatment for silicon direct bonding. Chemical reactions of the hydrogen plasma with the surfaces were used for both surface activation and removal of surface contaminants. Exposure of the silicon wafers to the plasma formed an active oxide layer on the surface. This layer was hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposure time and power. The surface became smoother with shorter plasma exposure time and lower power. In addition, the plasma surface treatment was very efficient in removing the carbon contaminants on the silicon surface. The value of the initial surface energy, as estimated by using the crack propagation method, was 506 mJ/m2, which was up to about three times higher than the value for the conventional direct bonding method using wet chemical treatments.

Original languageEnglish
Pages (from-to)878-881
Number of pages4
JournalJournal of the Korean Physical Society
Volume37
Issue number6
Publication statusPublished - 2000 Dec 1

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hydrogen plasma
silicon
surface treatment
contaminants
wafers
crack propagation
pretreatment
surface energy
chemical reactions
surface roughness
activation
oxides
carbon
hydrogen
gases

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Improvement of silicon direct bonding using surfaces activated by hydrogen plasma treatment. / Choi, Woo Beom; Ju, Chul Min; Lee, Jong Seok; Sung, Man Young.

In: Journal of the Korean Physical Society, Vol. 37, No. 6, 01.12.2000, p. 878-881.

Research output: Contribution to journalArticle

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