Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots

June O. Song, Hun Kang, I. T. Ferguson, Sung Pyo Jung, H. P. Lee, Hyun Gi Hong, Takhee Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on the improvement of the electrical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag (1 nm)/indium tin oxide (ITO) (250 nm) p-type contacts by using Ni nanodots. As-deposited Ag/ITO contacts with and without the Ni nanodots give non-linear electrical behaviour. However, annealing the samples at 530-630 °C for 1 min in air results in ohmic behaviour. The reverse leakage current characteristics of near UV LEDs are much improved when the Ni nanodots are used. The output power (at 20 mA) of LEDs fabricated with the Ni nanodots is enhanced by a factor of 1.34 as compared with that of LEDs made without the Ni nanodots.

Original languageEnglish
Pages (from-to)1986-1989
Number of pages4
JournalSolid-State Electronics
Volume49
Issue number12
DOIs
Publication statusPublished - 2005 Dec

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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