Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots

June O. Song, Hun Kang, I. T. Ferguson, Sung Pyo Jung, H. P. Lee, Hyun Gi Hong, Takhee Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on the improvement of the electrical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag (1 nm)/indium tin oxide (ITO) (250 nm) p-type contacts by using Ni nanodots. As-deposited Ag/ITO contacts with and without the Ni nanodots give non-linear electrical behaviour. However, annealing the samples at 530-630 °C for 1 min in air results in ohmic behaviour. The reverse leakage current characteristics of near UV LEDs are much improved when the Ni nanodots are used. The output power (at 20 mA) of LEDs fabricated with the Ni nanodots is enhanced by a factor of 1.34 as compared with that of LEDs made without the Ni nanodots.

Original languageEnglish
Pages (from-to)1986-1989
Number of pages4
JournalSolid-State Electronics
Volume49
Issue number12
DOIs
Publication statusPublished - 2005 Dec 1

Fingerprint

Light emitting diodes
light emitting diodes
Tin oxides
Indium
indium oxides
tin oxides
Leakage currents
Ultraviolet radiation
Diodes
Annealing
leakage
Air
annealing
output
air
indium tin oxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots. / Song, June O.; Kang, Hun; Ferguson, I. T.; Jung, Sung Pyo; Lee, H. P.; Hong, Hyun Gi; Lee, Takhee; Seong, Tae Yeon.

In: Solid-State Electronics, Vol. 49, No. 12, 01.12.2005, p. 1986-1989.

Research output: Contribution to journalArticle

Song, June O. ; Kang, Hun ; Ferguson, I. T. ; Jung, Sung Pyo ; Lee, H. P. ; Hong, Hyun Gi ; Lee, Takhee ; Seong, Tae Yeon. / Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots. In: Solid-State Electronics. 2005 ; Vol. 49, No. 12. pp. 1986-1989.
@article{d9b7c672e2f04bf3b42ba136a1f3d76b,
title = "Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots",
abstract = "We report on the improvement of the electrical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag (1 nm)/indium tin oxide (ITO) (250 nm) p-type contacts by using Ni nanodots. As-deposited Ag/ITO contacts with and without the Ni nanodots give non-linear electrical behaviour. However, annealing the samples at 530-630 °C for 1 min in air results in ohmic behaviour. The reverse leakage current characteristics of near UV LEDs are much improved when the Ni nanodots are used. The output power (at 20 mA) of LEDs fabricated with the Ni nanodots is enhanced by a factor of 1.34 as compared with that of LEDs made without the Ni nanodots.",
author = "Song, {June O.} and Hun Kang and Ferguson, {I. T.} and Jung, {Sung Pyo} and Lee, {H. P.} and Hong, {Hyun Gi} and Takhee Lee and Seong, {Tae Yeon}",
year = "2005",
month = "12",
day = "1",
doi = "10.1016/j.sse.2005.08.012",
language = "English",
volume = "49",
pages = "1986--1989",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "12",

}

TY - JOUR

T1 - Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots

AU - Song, June O.

AU - Kang, Hun

AU - Ferguson, I. T.

AU - Jung, Sung Pyo

AU - Lee, H. P.

AU - Hong, Hyun Gi

AU - Lee, Takhee

AU - Seong, Tae Yeon

PY - 2005/12/1

Y1 - 2005/12/1

N2 - We report on the improvement of the electrical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag (1 nm)/indium tin oxide (ITO) (250 nm) p-type contacts by using Ni nanodots. As-deposited Ag/ITO contacts with and without the Ni nanodots give non-linear electrical behaviour. However, annealing the samples at 530-630 °C for 1 min in air results in ohmic behaviour. The reverse leakage current characteristics of near UV LEDs are much improved when the Ni nanodots are used. The output power (at 20 mA) of LEDs fabricated with the Ni nanodots is enhanced by a factor of 1.34 as compared with that of LEDs made without the Ni nanodots.

AB - We report on the improvement of the electrical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag (1 nm)/indium tin oxide (ITO) (250 nm) p-type contacts by using Ni nanodots. As-deposited Ag/ITO contacts with and without the Ni nanodots give non-linear electrical behaviour. However, annealing the samples at 530-630 °C for 1 min in air results in ohmic behaviour. The reverse leakage current characteristics of near UV LEDs are much improved when the Ni nanodots are used. The output power (at 20 mA) of LEDs fabricated with the Ni nanodots is enhanced by a factor of 1.34 as compared with that of LEDs made without the Ni nanodots.

UR - http://www.scopus.com/inward/record.url?scp=28044446794&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28044446794&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2005.08.012

DO - 10.1016/j.sse.2005.08.012

M3 - Article

VL - 49

SP - 1986

EP - 1989

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 12

ER -