Abstract
The leakage current density of a 1.0 mol% TiO 2-doped Bi 5Nb 3O 15 (TB 5N 3) film was high, and the breakdown electric field was low. This could be attributed to the presence of intrinsic oxygen vacancies and free electrons. The electrical properties of the TB 5N 3 film improved upon the addition of MnO 2 because of the formation of extrinsic oxygen vacancies, which caused the number of intrinsic oxygen vacancies to decrease in order to maintain the equilibrium concentration of oxygen vacancies in the film. However, the electric properties degraded when the MnO 2 content exceeded 15.0 mol% because of the formation of interstitial oxygen ions and holes. The dielectric constant (ε r) of the TB 5N 3 film slightly decreased upon the addition of a small amount of MnO 2. The TB 5N 3 film with 15.0 mol% MnO 2, which exhibited a small leakage current density of 2.5 × 10 -11 A/cm 2 at 0.15 MV/cm and a high breakdown electric field of 0.47 MV/cm, still maintained a large ε r of 118 with a small loss tangent of 2.0% at 100.0 kHz.
| Original language | English |
|---|---|
| Pages (from-to) | 148-151 |
| Number of pages | 4 |
| Journal | Current Applied Physics |
| Volume | 13 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2013 Jan 1 |
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Keywords
- Dielectrics
- Doping
- High k
- Leakage current density
- Pulsed laser deposition
- Thin film
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Improvement of the electrical properties of TiO 2-doped Bi 5Nb 3O 15 thin films by the addition of MnO 2 . / Sun, Jong Woo; Kweon, Sang Hyo; Seong, Tae Geun; Kim, Jin Seong; Jeong, Byoung Jik; Nahm, Sahn.
In: Current Applied Physics, Vol. 13, No. 1, 01.01.2013, p. 148-151.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Improvement of the electrical properties of TiO 2-doped Bi 5Nb 3O 15 thin films by the addition of MnO 2
AU - Sun, Jong Woo
AU - Kweon, Sang Hyo
AU - Seong, Tae Geun
AU - Kim, Jin Seong
AU - Jeong, Byoung Jik
AU - Nahm, Sahn
PY - 2013/1/1
Y1 - 2013/1/1
N2 - The leakage current density of a 1.0 mol% TiO 2-doped Bi 5Nb 3O 15 (TB 5N 3) film was high, and the breakdown electric field was low. This could be attributed to the presence of intrinsic oxygen vacancies and free electrons. The electrical properties of the TB 5N 3 film improved upon the addition of MnO 2 because of the formation of extrinsic oxygen vacancies, which caused the number of intrinsic oxygen vacancies to decrease in order to maintain the equilibrium concentration of oxygen vacancies in the film. However, the electric properties degraded when the MnO 2 content exceeded 15.0 mol% because of the formation of interstitial oxygen ions and holes. The dielectric constant (ε r) of the TB 5N 3 film slightly decreased upon the addition of a small amount of MnO 2. The TB 5N 3 film with 15.0 mol% MnO 2, which exhibited a small leakage current density of 2.5 × 10 -11 A/cm 2 at 0.15 MV/cm and a high breakdown electric field of 0.47 MV/cm, still maintained a large ε r of 118 with a small loss tangent of 2.0% at 100.0 kHz.
AB - The leakage current density of a 1.0 mol% TiO 2-doped Bi 5Nb 3O 15 (TB 5N 3) film was high, and the breakdown electric field was low. This could be attributed to the presence of intrinsic oxygen vacancies and free electrons. The electrical properties of the TB 5N 3 film improved upon the addition of MnO 2 because of the formation of extrinsic oxygen vacancies, which caused the number of intrinsic oxygen vacancies to decrease in order to maintain the equilibrium concentration of oxygen vacancies in the film. However, the electric properties degraded when the MnO 2 content exceeded 15.0 mol% because of the formation of interstitial oxygen ions and holes. The dielectric constant (ε r) of the TB 5N 3 film slightly decreased upon the addition of a small amount of MnO 2. The TB 5N 3 film with 15.0 mol% MnO 2, which exhibited a small leakage current density of 2.5 × 10 -11 A/cm 2 at 0.15 MV/cm and a high breakdown electric field of 0.47 MV/cm, still maintained a large ε r of 118 with a small loss tangent of 2.0% at 100.0 kHz.
KW - Dielectrics
KW - Doping
KW - High k
KW - Leakage current density
KW - Pulsed laser deposition
KW - Thin film
UR - http://www.scopus.com/inward/record.url?scp=84866113267&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84866113267&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2012.07.008
DO - 10.1016/j.cap.2012.07.008
M3 - Article
AN - SCOPUS:84866113267
VL - 13
SP - 148
EP - 151
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 1
ER -