Improvement of the electrical properties of TiO 2-doped Bi 5Nb 3O 15 thin films by the addition of MnO 2

Jong Woo Sun; Sang Hyo Kweon; Tae Geun Seong; Jin Seong Kim; Byoung Jik Jeong; Sahn Nahm

doi:10.1016/j.cap.2012.07.008

Improvement of the electrical properties of TiO ₂-doped Bi ₅Nb ₃O ₁₅ thin films by the addition of MnO ₂

Jong Woo Sun, Sang Hyo Kweon, Tae Geun Seong, Jin Seong Kim, Byoung Jik Jeong, Sahn Nahm

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

Abstract

The leakage current density of a 1.0 mol% TiO ₂-doped Bi ₅Nb ₃O ₁₅ (TB ₅N ₃) film was high, and the breakdown electric field was low. This could be attributed to the presence of intrinsic oxygen vacancies and free electrons. The electrical properties of the TB ₅N ₃ film improved upon the addition of MnO ₂ because of the formation of extrinsic oxygen vacancies, which caused the number of intrinsic oxygen vacancies to decrease in order to maintain the equilibrium concentration of oxygen vacancies in the film. However, the electric properties degraded when the MnO ₂ content exceeded 15.0 mol% because of the formation of interstitial oxygen ions and holes. The dielectric constant (ε _r) of the TB ₅N ₃ film slightly decreased upon the addition of a small amount of MnO ₂. The TB ₅N ₃ film with 15.0 mol% MnO ₂, which exhibited a small leakage current density of 2.5 × 10 ^-11 A/cm ² at 0.15 MV/cm and a high breakdown electric field of 0.47 MV/cm, still maintained a large ε _r of 118 with a small loss tangent of 2.0% at 100.0 kHz.

Original language	English
Pages (from-to)	148-151
Number of pages	4
Journal	Current Applied Physics
Volume	13
Issue number	1
DOIs	https://doi.org/10.1016/j.cap.2012.07.008
Publication status	Published - 2013 Jan 1

Keywords

Dielectrics
Doping
High k
Leakage current density
Pulsed laser deposition
Thin film

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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Sun, J. W., Kweon, S. H., Seong, T. G., Kim, J. S., Jeong, B. J., & Nahm, S. (2013). Improvement of the electrical properties of TiO ₂-doped Bi ₅Nb ₃O ₁₅ thin films by the addition of MnO ₂ Current Applied Physics, 13(1), 148-151. https://doi.org/10.1016/j.cap.2012.07.008

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title = "Improvement of the electrical properties of TiO 2-doped Bi 5Nb 3O 15 thin films by the addition of MnO 2 ",

abstract = "The leakage current density of a 1.0 mol% TiO 2-doped Bi 5Nb 3O 15 (TB 5N 3) film was high, and the breakdown electric field was low. This could be attributed to the presence of intrinsic oxygen vacancies and free electrons. The electrical properties of the TB 5N 3 film improved upon the addition of MnO 2 because of the formation of extrinsic oxygen vacancies, which caused the number of intrinsic oxygen vacancies to decrease in order to maintain the equilibrium concentration of oxygen vacancies in the film. However, the electric properties degraded when the MnO 2 content exceeded 15.0 mol% because of the formation of interstitial oxygen ions and holes. The dielectric constant (ε r) of the TB 5N 3 film slightly decreased upon the addition of a small amount of MnO 2. The TB 5N 3 film with 15.0 mol% MnO 2, which exhibited a small leakage current density of 2.5 × 10 -11 A/cm 2 at 0.15 MV/cm and a high breakdown electric field of 0.47 MV/cm, still maintained a large ε r of 118 with a small loss tangent of 2.0% at 100.0 kHz.",

keywords = "Dielectrics, Doping, High k, Leakage current density, Pulsed laser deposition, Thin film",

author = "Sun, {Jong Woo} and Kweon, {Sang Hyo} and Seong, {Tae Geun} and Kim, {Jin Seong} and Jeong, {Byoung Jik} and Sahn Nahm",

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AU - Kim, Jin Seong

AU - Jeong, Byoung Jik

AU - Nahm, Sahn

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N2 - The leakage current density of a 1.0 mol% TiO 2-doped Bi 5Nb 3O 15 (TB 5N 3) film was high, and the breakdown electric field was low. This could be attributed to the presence of intrinsic oxygen vacancies and free electrons. The electrical properties of the TB 5N 3 film improved upon the addition of MnO 2 because of the formation of extrinsic oxygen vacancies, which caused the number of intrinsic oxygen vacancies to decrease in order to maintain the equilibrium concentration of oxygen vacancies in the film. However, the electric properties degraded when the MnO 2 content exceeded 15.0 mol% because of the formation of interstitial oxygen ions and holes. The dielectric constant (ε r) of the TB 5N 3 film slightly decreased upon the addition of a small amount of MnO 2. The TB 5N 3 film with 15.0 mol% MnO 2, which exhibited a small leakage current density of 2.5 × 10 -11 A/cm 2 at 0.15 MV/cm and a high breakdown electric field of 0.47 MV/cm, still maintained a large ε r of 118 with a small loss tangent of 2.0% at 100.0 kHz.

AB - The leakage current density of a 1.0 mol% TiO 2-doped Bi 5Nb 3O 15 (TB 5N 3) film was high, and the breakdown electric field was low. This could be attributed to the presence of intrinsic oxygen vacancies and free electrons. The electrical properties of the TB 5N 3 film improved upon the addition of MnO 2 because of the formation of extrinsic oxygen vacancies, which caused the number of intrinsic oxygen vacancies to decrease in order to maintain the equilibrium concentration of oxygen vacancies in the film. However, the electric properties degraded when the MnO 2 content exceeded 15.0 mol% because of the formation of interstitial oxygen ions and holes. The dielectric constant (ε r) of the TB 5N 3 film slightly decreased upon the addition of a small amount of MnO 2. The TB 5N 3 film with 15.0 mol% MnO 2, which exhibited a small leakage current density of 2.5 × 10 -11 A/cm 2 at 0.15 MV/cm and a high breakdown electric field of 0.47 MV/cm, still maintained a large ε r of 118 with a small loss tangent of 2.0% at 100.0 kHz.

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