Improvement of the electrical properties of TiO 2-doped Bi 5Nb 3O 15 thin films by the addition of MnO 2

Jong Woo Sun, Sang Hyo Kweon, Tae Geun Seong, Jin Seong Kim, Byoung Jik Jeong, Sahn Nahm

Research output: Contribution to journalArticle


The leakage current density of a 1.0 mol% TiO 2-doped Bi 5Nb 3O 15 (TB 5N 3) film was high, and the breakdown electric field was low. This could be attributed to the presence of intrinsic oxygen vacancies and free electrons. The electrical properties of the TB 5N 3 film improved upon the addition of MnO 2 because of the formation of extrinsic oxygen vacancies, which caused the number of intrinsic oxygen vacancies to decrease in order to maintain the equilibrium concentration of oxygen vacancies in the film. However, the electric properties degraded when the MnO 2 content exceeded 15.0 mol% because of the formation of interstitial oxygen ions and holes. The dielectric constant (ε r) of the TB 5N 3 film slightly decreased upon the addition of a small amount of MnO 2. The TB 5N 3 film with 15.0 mol% MnO 2, which exhibited a small leakage current density of 2.5 × 10 -11 A/cm 2 at 0.15 MV/cm and a high breakdown electric field of 0.47 MV/cm, still maintained a large ε r of 118 with a small loss tangent of 2.0% at 100.0 kHz.

Original languageEnglish
Pages (from-to)148-151
Number of pages4
JournalCurrent Applied Physics
Issue number1
Publication statusPublished - 2013 Jan 1



  • Dielectrics
  • Doping
  • High k
  • Leakage current density
  • Pulsed laser deposition
  • Thin film

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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