Improvement of the light output of AlGaInP-based light-emitting diode by employing highly transparent Au/ITO p-type electrode

Byoungjun Choi, Dae Hyun Kim, Daesung Kang, Tae Yeon Seong

Research output: Contribution to journalArticle

1 Citation (Scopus)


We report on the development of highly transparent and low resistance Au/ITO ohmic contacts on a p-GaP window layer for AlGaInP-based light-emitting diodes (LEDs). When annealed at 400 °C, the Au/ITO (20/40 nm) contacts showed a specific contact resistance of 4.4 × 10−4 Ωcm2, which is comparable to that of conventional AuBe/Au (130 nm/100 nm) contacts. At 617 nm, the AuBe/Au film was opaque, while the Au/ITO films had transmittances of 63.3–92.8%. The Au/ITO films exhibited low sheet resistances of 1.4–5.1 Ω/sq. LEDs fabricated with the Au/ITO electrodes gave forward voltages of 2.07–2.18 at 20 mA, which is comparable to that of the AuBe/Au contact (2.06 V). The LEDs with the Au/ITO electrode showed 9.8–46.1% higher light output power at 100 mA than that with the AuBe/Au electrode. On the basis of the X-ray photoemission spectroscopy (XPS) and scanning transmission electron microscopy (STEM) results, the annealing-induced electrical improvement is described and discussed.

Original languageEnglish
Pages (from-to)1180-1185
Number of pages6
JournalJournal of Alloys and Compounds
Publication statusPublished - 2017 Mar 30



  • Au/ITO
  • Electrode
  • Light-emitting diode
  • Ohmic contact
  • Transparency

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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