Improvement of the Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad

Jong Ho Kim, Yong Won Lee, Hyeong Seop Im, Chan Hyoung Oh, Jong In Shim, Daesung Kang, Tae Yeon Seong, Hiroshi Amano

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1 Citation (Scopus)

Abstract

To enhance the light output of blue InGaN-based light emitting diodes (LEDs), a buried stripe-type n-electrode, expanded stripe-type p-electrode, and reflective p-bonding pad were employed. Flip-chip (FC) LEDs with the expanded p-electrode gave forward voltages of 2.99-3.11 V at 100 mA and series resistances of 3.28-3.94 Ω. The expanded p-electrode FCLED fabricated with 375 nm-thick window and TiO2 adhesion layers produced 22.7% higher light output at 21 A/cm2 than conventional FCLEDs. The expanded p-electrode FCLEDs revealed better current spreading efficiency than the c-FCLED, indicating the importance of the use of an optimised window and TiO2 adhesion layers.

Original languageEnglish
Article number015021
JournalECS Journal of Solid State Science and Technology
Volume9
Issue number1
DOIs
Publication statusPublished - 2020 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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