Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p -type electrodes

June O. Song, J. S. Kwak, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

We report on the formation of highly transparent and low-resistance Cu-doped indium oxide(CIO)(3 nm)/indium tin oxide (ITO) (400 nm) ohmic contact to p -type GaN for high-brightness light-emitting diodes (LEDs) for solid-state lighting. The CIO/ITO contacts become ohmic with specific contact resistances of ~ 10-4 Ω cm2 and give transmittance higher than 98.7% at a wavelength of 405 nm when annealed at 630°C for 1 min in air. Near UV LEDs fabricated with the annealed CIO/ITO p -type contact layers give a forward-bias voltage of 3.25 V at injection current of 20 mA. It is further shown that the output power of the LEDs with the CIO/ITO contacts is enhanced 78% at 20 mA as compared with that of LEDs with the conventional NiAu contacts.

Original languageEnglish
Article number213505
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number21
DOIs
Publication statusPublished - 2005 May 23

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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