Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p -type electrodes

June O. Song, J. S. Kwak, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

We report on the formation of highly transparent and low-resistance Cu-doped indium oxide(CIO)(3 nm)/indium tin oxide (ITO) (400 nm) ohmic contact to p -type GaN for high-brightness light-emitting diodes (LEDs) for solid-state lighting. The CIO/ITO contacts become ohmic with specific contact resistances of ~ 10-4 Ω cm2 and give transmittance higher than 98.7% at a wavelength of 405 nm when annealed at 630°C for 1 min in air. Near UV LEDs fabricated with the annealed CIO/ITO p -type contact layers give a forward-bias voltage of 3.25 V at injection current of 20 mA. It is further shown that the output power of the LEDs with the CIO/ITO contacts is enhanced 78% at 20 mA as compared with that of LEDs with the conventional NiAu contacts.

Original languageEnglish
Article number213505
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number21
DOIs
Publication statusPublished - 2005 May 23
Externally publishedYes

Fingerprint

indium oxides
tin oxides
light emitting diodes
electrodes
output
low resistance
contact resistance
illuminating
electric contacts
transmittance
brightness
injection
solid state
air
electric potential
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p -type electrodes. / Song, June O.; Kwak, J. S.; Park, Y.; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 86, No. 21, 213505, 23.05.2005, p. 1-3.

Research output: Contribution to journalArticle

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N2 - We report on the formation of highly transparent and low-resistance Cu-doped indium oxide(CIO)(3 nm)/indium tin oxide (ITO) (400 nm) ohmic contact to p -type GaN for high-brightness light-emitting diodes (LEDs) for solid-state lighting. The CIO/ITO contacts become ohmic with specific contact resistances of ~ 10-4 Ω cm2 and give transmittance higher than 98.7% at a wavelength of 405 nm when annealed at 630°C for 1 min in air. Near UV LEDs fabricated with the annealed CIO/ITO p -type contact layers give a forward-bias voltage of 3.25 V at injection current of 20 mA. It is further shown that the output power of the LEDs with the CIO/ITO contacts is enhanced 78% at 20 mA as compared with that of LEDs with the conventional NiAu contacts.

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