Improvement of the light output power of GaN-based vertical light emitting diodes by a current blocking layer

Hwan Hee Jeong, Sang Youl Lee, Young Kyu Jeong, Kwang Ki Choi, June O. Song, Yong Hyun Lee, Tae Yeon Seong

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19 Citations (Scopus)


The light output characteristics of GaN-based vertical light emitting diodes (1×1 mm) fabricated by the multifunctional bonding material system have been investigated as a function of the linewidth of a SiO2 current blocking layer (CBL). As the CBL width increases from 0 to 20 μm, the forward voltage increases from 2.82 to 2.88 V at 350 mA, whereas the reverse leakage current decreases from 4.90× 10-7 to 3.05× 10-7 A at -10 V. The output power increases with increasing CBL linewidth. Furthermore, the output power of all the samples continuously increases without saturation across the current range of 0-1000 mA.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number7
Publication statusPublished - 2010 Sep 7


ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

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