We have investigated Ag-indium tin oxide (ITO) scheme for obtaining high-quality p-type ohmic contacts for GaN-based light-emitting diodes (LEDs). The Ag(1 nm)-ITO(200 nm) contacts exhibit greatly improved electrical characteristics when annealed at temperatures in the range 400 °C-600 °C for 1 min in air, yielding specific contact resistances of ∼10-4 Ω.cm2. In addition the contacts give transmittance of about 96% at 460 nm, which is far better than that of the conventionally used oxidized Ni-Au contacts. It is shown that the luminous intensity of blue LEDs fabricated with the Ag-ITO contacts is about three times higher than that of LEDs with oxidized Ni-Au contacts. This result strongly indicates that the Ag-ITO scheme can serve as a highly promising p-type ohmic contact for the realization of high brightness near ultraviolet LEDs.
- Indium tin oxide (ITO)
- Light-emitting diode (LED)
- Ohmic contact
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering