Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts

June O. Song, Dong Seok Leem, Joon Seop Kwak, Y. Park, S. W. Chae, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)

Abstract

We have investigated Ag-indium tin oxide (ITO) scheme for obtaining high-quality p-type ohmic contacts for GaN-based light-emitting diodes (LEDs). The Ag(1 nm)-ITO(200 nm) contacts exhibit greatly improved electrical characteristics when annealed at temperatures in the range 400 °C-600 °C for 1 min in air, yielding specific contact resistances of ∼10-4 Ω.cm2. In addition the contacts give transmittance of about 96% at 460 nm, which is far better than that of the conventionally used oxidized Ni-Au contacts. It is shown that the luminous intensity of blue LEDs fabricated with the Ag-ITO contacts is about three times higher than that of LEDs with oxidized Ni-Au contacts. This result strongly indicates that the Ag-ITO scheme can serve as a highly promising p-type ohmic contact for the realization of high brightness near ultraviolet LEDs.

Original languageEnglish
Pages (from-to)291-293
Number of pages3
JournalIEEE Photonics Technology Letters
Volume17
Issue number2
DOIs
Publication statusPublished - 2005 Feb
Externally publishedYes

Keywords

  • Ag
  • GaN
  • Indium tin oxide (ITO)
  • Light-emitting diode (LED)
  • Ohmic contact

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts'. Together they form a unique fingerprint.

Cite this