Improvement of the morphological stability of Ni-silicided Si 0.8Ge0.2 layers by using a molybdenum interlayer

Young Woo Ok, S. H. Kim, Y. J. Song, K. H. Shim, Tae Yeon Seong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The morphological stability of Ni-silicided Si0.8Ge 0.2 layers was investigated for improvement by using a molybdenum interlayer. A 200-nm-thick layer was epitaxially grown on an n-type (001) Si substrate by chemical vapor deposition. The samples were annealed in a tube furnace in a flowing N2 ambient. The results show that the use of Mo interlayer is effective in improving the thermal stability of the Ni-germanosilicide and also effective in improving oxidation resistance.

Original languageEnglish
Pages (from-to)1088-1093
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number3
Publication statusPublished - 2004 May

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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