The morphological stability of Ni-silicided Si0.8Ge 0.2 layers was investigated for improvement by using a molybdenum interlayer. A 200-nm-thick layer was epitaxially grown on an n-type (001) Si substrate by chemical vapor deposition. The samples were annealed in a tube furnace in a flowing N2 ambient. The results show that the use of Mo interlayer is effective in improving the thermal stability of the Ni-germanosilicide and also effective in improving oxidation resistance.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2004 May|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering