Abstract
We have simulated a symmetric dual-gate TFT which has triple floating n+ channel to improve the on-current of the dual-gate TFT. We achieved a low hole concentration at the source and channel junction causes the improvement the potential barrier so that we observed the reduction of the kink-effect. In this paper, we observed the reduction of the kink-effect compared with the conventional single-gate TFT and the improvement of the on-current compared with the conventional dual-gate TFT.
| Original language | English |
|---|---|
| Pages (from-to) | 342-344 |
| Number of pages | 3 |
| Journal | Proceedings of International Meeting on Information Display |
| Volume | 1 |
| Publication status | Published - 2006 |
| Event | 5th International Meeting on Information Display - Seoul, Korea, Republic of Duration: 2005 Jul 19 → 2005 Jul 23 |
ASJC Scopus subject areas
- Engineering(all)