Improvement of the on-current for the symmetric dual-gate TFT structure by floating N+ channel

Dae Yeon Lee, Sang Jun Hwang, Sang Won Park, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have simulated a symmetric dual-gate TFT which has triple floating n+ channel to improve the on-current of the dual-gate TFT. We achieved a low hole concentration at the source and channel junction causes the improvement the potential barrier so that we observed the reduction of the kink-effect. In this paper, we observed the reduction of the kink-effect compared with the conventional single-gate TFT and the improvement of the on-current compared with the conventional dual-gate TFT.

Original languageEnglish
Title of host publicationProceedings of International Meeting on Information Display
Pages342-344
Number of pages3
Volume1
Publication statusPublished - 2006
Event5th International Meeting on Information Display - Seoul, Korea, Republic of
Duration: 2005 Jul 192005 Jul 23

Other

Other5th International Meeting on Information Display
CountryKorea, Republic of
CitySeoul
Period05/7/1905/7/23

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Hole concentration

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Lee, D. Y., Hwang, S. J., Park, S. W., & Sung, M. Y. (2006). Improvement of the on-current for the symmetric dual-gate TFT structure by floating N+ channel. In Proceedings of International Meeting on Information Display (Vol. 1, pp. 342-344)

Improvement of the on-current for the symmetric dual-gate TFT structure by floating N+ channel. / Lee, Dae Yeon; Hwang, Sang Jun; Park, Sang Won; Sung, Man Young.

Proceedings of International Meeting on Information Display. Vol. 1 2006. p. 342-344.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, DY, Hwang, SJ, Park, SW & Sung, MY 2006, Improvement of the on-current for the symmetric dual-gate TFT structure by floating N+ channel. in Proceedings of International Meeting on Information Display. vol. 1, pp. 342-344, 5th International Meeting on Information Display, Seoul, Korea, Republic of, 05/7/19.
Lee DY, Hwang SJ, Park SW, Sung MY. Improvement of the on-current for the symmetric dual-gate TFT structure by floating N+ channel. In Proceedings of International Meeting on Information Display. Vol. 1. 2006. p. 342-344
Lee, Dae Yeon ; Hwang, Sang Jun ; Park, Sang Won ; Sung, Man Young. / Improvement of the on-current for the symmetric dual-gate TFT structure by floating N+ channel. Proceedings of International Meeting on Information Display. Vol. 1 2006. pp. 342-344
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