Improvement of the on-current for the symmetric dual-gate TFT structure by floating N+ channel

Dae Yeon Lee, Sang Jun Hwang, Sang Won Park, Man Young Sung

Research output: Contribution to journalConference article

Abstract

We have simulated a symmetric dual-gate TFT which has triple floating n+ channel to improve the on-current of the dual-gate TFT. We achieved a low hole concentration at the source and channel junction causes the improvement the potential barrier so that we observed the reduction of the kink-effect. In this paper, we observed the reduction of the kink-effect compared with the conventional single-gate TFT and the improvement of the on-current compared with the conventional dual-gate TFT.

Original languageEnglish
Pages (from-to)342-344
Number of pages3
JournalProceedings of International Meeting on Information Display
Volume1
Publication statusPublished - 2006
Event5th International Meeting on Information Display - Seoul, Korea, Republic of
Duration: 2005 Jul 192005 Jul 23

ASJC Scopus subject areas

  • Engineering(all)

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