Improvement of the reverse leakage behavior of Ag-based ohmic contacts for GaN-based light-emitting diodes using MgZnO interlayer

Hyun Gi Hong, June O. Song, Takhee Lee, I. T. Ferguson, Joon Seop Kwak, Tae Yeon Seong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

MgZnO(MZO) interlayers are introduced to form high-quality Ag-based ohmic contacts to p-type GaN (Na = 4 × 1017 cm-3) for GaN-based flip-chip light-emitting diodes (LEDs). The MZO (2.5 nm)/Ag (250 nm) contacts become ohmic with specific contact resistance of 3.83 × 10-4 Ω cm2 and reflectance of ∼83% at a wavelength of 405 nm when annealed at 530 °C for 1 min in air. It is shown that LEDs made with the MZO interlayers yield reverse leakage currents three orders of magnitude lower than that of LEDs without the interlayers. In addition, the LEDs fabricated with the MZO interlayers show higher output power as compared with the LEDs without the interlayers.

Original languageEnglish
Pages (from-to)176-179
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume129
Issue number1-3
DOIs
Publication statusPublished - 2006 Apr 15

Fingerprint

Ohmic contacts
Light emitting diodes
electric contacts
interlayers
leakage
light emitting diodes
Contact resistance
contact resistance
Leakage currents
chips
reflectance
Wavelength
output
air
Air
wavelengths

Keywords

  • GaN
  • LEDs
  • MgZnO
  • Ohmic contact

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Improvement of the reverse leakage behavior of Ag-based ohmic contacts for GaN-based light-emitting diodes using MgZnO interlayer. / Hong, Hyun Gi; Song, June O.; Lee, Takhee; Ferguson, I. T.; Kwak, Joon Seop; Seong, Tae Yeon.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 129, No. 1-3, 15.04.2006, p. 176-179.

Research output: Contribution to journalArticle

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AU - Hong, Hyun Gi

AU - Song, June O.

AU - Lee, Takhee

AU - Ferguson, I. T.

AU - Kwak, Joon Seop

AU - Seong, Tae Yeon

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AB - MgZnO(MZO) interlayers are introduced to form high-quality Ag-based ohmic contacts to p-type GaN (Na = 4 × 1017 cm-3) for GaN-based flip-chip light-emitting diodes (LEDs). The MZO (2.5 nm)/Ag (250 nm) contacts become ohmic with specific contact resistance of 3.83 × 10-4 Ω cm2 and reflectance of ∼83% at a wavelength of 405 nm when annealed at 530 °C for 1 min in air. It is shown that LEDs made with the MZO interlayers yield reverse leakage currents three orders of magnitude lower than that of LEDs without the interlayers. In addition, the LEDs fabricated with the MZO interlayers show higher output power as compared with the LEDs without the interlayers.

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