Improvement of the reverse leakage behavior of Ag-based ohmic contacts for GaN-based light-emitting diodes using MgZnO interlayer

Hyun Gi Hong, June O. Song, Takhee Lee, I. T. Ferguson, Joon Seop Kwak, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

MgZnO(MZO) interlayers are introduced to form high-quality Ag-based ohmic contacts to p-type GaN (Na = 4 × 1017 cm-3) for GaN-based flip-chip light-emitting diodes (LEDs). The MZO (2.5 nm)/Ag (250 nm) contacts become ohmic with specific contact resistance of 3.83 × 10-4 Ω cm2 and reflectance of ∼83% at a wavelength of 405 nm when annealed at 530 °C for 1 min in air. It is shown that LEDs made with the MZO interlayers yield reverse leakage currents three orders of magnitude lower than that of LEDs without the interlayers. In addition, the LEDs fabricated with the MZO interlayers show higher output power as compared with the LEDs without the interlayers.

Original languageEnglish
Pages (from-to)176-179
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume129
Issue number1-3
DOIs
Publication statusPublished - 2006 Apr 15

Keywords

  • GaN
  • LEDs
  • MgZnO
  • Ohmic contact

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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