Improvement of the thermal and chemical stability of Al doped ZnO films

I. H. Kim, D. Y. Ku, J. H. Ko, D. Kim, K. S. Lee, J. H. Jeong, T. S. Lee, B. Cheong, Y. J. Baik, W. M. Kim

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


To improve the stability of sputter-deposited ZnO:Al (AZO) films at high temperature above 300°C, an amorphous Zn-Sn-O (ZTO) film was deposited on the top of AZO films as an protective layer by co-sputtering of pure ZnO and SnO2 targets. Amorphous ZTO films had resistivity in the range from 10-2 to 10-3 Ωcm and were stable up to temperature of 400°C. Heat treatments of bare AZO films in the atmosphere at 400°C resulted in a dramatic increase in the resistivity accompanied by substantial decrease in carrier concentration and Hall mobility. The AZO films covered with the ZTO film showed remarkable improvement in thermal stability for subsequent heat treatments in the temperature range from 200 to 400°C in the atmosphere as well as chemical stability in weak acidic solution. X-ray photoelectron spectroscopy analysis showed that the improvement was attained by ZTO layer acting as diffusion barrier of oxygens and/or water vapors.

Original languageEnglish
Pages (from-to)241-245
Number of pages5
JournalJournal of Electroceramics
Issue number2-4
Publication statusPublished - 2006 Dec


  • Amorphous
  • Chemical
  • Stability
  • Thermal
  • Transparent conducting oxide
  • ZTO
  • Zinc stannate
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering


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