Improvement of uniformity in chemical vapor deposition of silicon carbide by using CFD

Jin Won Seo, Jun Woo Kim, Kyoon Choi, Jong Heun Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The chemical vapor deposition (CVD) of silicon carbide (SiC) on carbon has been widely used as a general method to suppress dust generation on carbon surfaces. For a CH3SiCl3 (MTS) and hydrogen system, computational fluid dynamic simulations to predict the growth rate of the silicon carbide are performed. The results of the simulations are consistent with the experimental results where the deposition rate depends highly on the H/Si composition and the specimen’s location. This simulation can provide guidance in optimizing the CVD process and improving the apparatus for CVD of SiC.

Original languageEnglish
Pages (from-to)170-175
Number of pages6
JournalJournal of the Korean Physical Society
Volume68
Issue number1
DOIs
Publication statusPublished - 2016 Jan 1

Fingerprint

charge flow devices
silicon carbides
vapor deposition
simulation
carbon
computational fluid dynamics
dust
hydrogen

Keywords

  • Chemical vapor deposition (CVD)
  • Computational fluid dynamics (CFD)
  • Hard coating
  • Silicon carbide

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Improvement of uniformity in chemical vapor deposition of silicon carbide by using CFD. / Seo, Jin Won; Kim, Jun Woo; Choi, Kyoon; Lee, Jong Heun.

In: Journal of the Korean Physical Society, Vol. 68, No. 1, 01.01.2016, p. 170-175.

Research output: Contribution to journalArticle

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