Improving performance of high-power indium gallium nitride/gallium nitride-based vertical light-emitting diodes by employing simple n-type electrode pattern

Woong Sun Yum, June O. Song, Hwan Hee Jeong, Jeong Tak Oh, Tae Yeon Seong

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this work, simple n-type electrode structures were used to enhance the electrical and optical performances of fully packaged commercially mass-produced vertical-geometry light-emitting diodes (VLEDs). The forward bias voltage of the VLED with a Y-pattern electrode increased less rapidly than that of VLEDs with a reference electrode. The VLEDs with the reference and Y-pattern electrodes exhibited forward voltages of 2.93 ± 0.015 and 2.89 ± 0.015 V at 350 mA and 3.77 ± 0.015 and 3.53 ± 0.015 V at 2000 mA, respectively. The VLEDs with the Y-pattern electrode resulted in a higher light output than the VLEDs with the reference electrode with increase in the drive current to 2000 mA. The emission images showed that the VLEDs with the Y-pattern electrode exhibited better current spreading behavior and lower junction temperatures than the VLEDs with the reference electrode. With increase in the current from 350 to 2000 mA, the VLEDs with the Y-pattern electrode experienced a 39.4% reduction in the wall plug efficiency, whereas the VLEDs with the reference electrode suffered from a 43.3% reduction.

Original languageEnglish
Pages (from-to)209-213
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume31
DOIs
Publication statusPublished - 2015 Jan 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Fingerprint Dive into the research topics of 'Improving performance of high-power indium gallium nitride/gallium nitride-based vertical light-emitting diodes by employing simple n-type electrode pattern'. Together they form a unique fingerprint.

  • Cite this